Effect of forming gas annealing on the inversion response and minority carrier generation lifetime of n and p-In0. 53Ga0. 47As MOS capacitors

É O’Connor; K Cherkaoui; S Monaghan; B Sheehan; IM Povey; PK Hurley

Effect of forming gas annealing on the inversion response and minority carrier generation lifetime of n and p-In0. 53Ga0. 47As MOS capacitors

É O’Connor
, K Cherkaoui
, S Monaghan
, B Sheehan
, IM Povey
, PK Hurley

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Journal	Microelectronic Engineering
Publication status	Published - 2015

Cite this

@article{a01fa9f1fa4b4741b6620cd21bb08847,

title = "Effect of forming gas annealing on the inversion response and minority carrier generation lifetime of n and p-In0. 53Ga0. 47As MOS capacitors",

author = "{\'E} O{\textquoteright}Connor and K Cherkaoui and S Monaghan and B Sheehan and IM Povey and PK Hurley",

year = "2015",

language = "Undefined/Unknown",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Effect of forming gas annealing on the inversion response and minority carrier generation lifetime of n and p-In0. 53Ga0. 47As MOS capacitors

AU - O’Connor, É

AU - Cherkaoui, K

AU - Monaghan, S

AU - Sheehan, B

AU - Povey, IM

AU - Hurley, PK

PY - 2015

Y1 - 2015

M3 - Article

SN - 0167-9317

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -