TY - GEN
T1 - Effect of Germanium Doping on the Performance of a Silicon Optical Modulator
AU - Mishra, Darpan
AU - Minz, Manoranjan
AU - Sonkar, Ramesh Kumar
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/6
Y1 - 2019/6
N2 - In this paper, the transfer characteristics of a germanium doped silicon Mach-Zehnder modulator (MZM) have been plotted and compared with a silicon MZM. The germanium doped silicon MZM can achieve better extinction ratio at lower drive voltages owing to its larger phase shift per unit length and lower total absorption for \pi phase shift compared to silicon. An extinction ratio of 35.5 dB at 1 V peak-to-peak drive voltage has been observed for the germanium doped silicon MZM with single arm drive and 5 mm long phase shifter.
AB - In this paper, the transfer characteristics of a germanium doped silicon Mach-Zehnder modulator (MZM) have been plotted and compared with a silicon MZM. The germanium doped silicon MZM can achieve better extinction ratio at lower drive voltages owing to its larger phase shift per unit length and lower total absorption for \pi phase shift compared to silicon. An extinction ratio of 35.5 dB at 1 V peak-to-peak drive voltage has been observed for the germanium doped silicon MZM with single arm drive and 5 mm long phase shifter.
UR - https://www.scopus.com/pages/publications/85082017059
U2 - 10.1109/PIERS-Spring46901.2019.9017271
DO - 10.1109/PIERS-Spring46901.2019.9017271
M3 - Conference proceeding
AN - SCOPUS:85082017059
T3 - Progress in Electromagnetics Research Symposium
SP - 3683
EP - 3685
BT - 2019 PhotonIcs and Electromagnetics Research Symposium - Spring, PIERS-Spring 2019 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2019 PhotonIcs and Electromagnetics Research Symposium - Spring, PIERS-Spring 2019
Y2 - 17 June 2019 through 20 June 2019
ER -