TY - JOUR
T1 - Effect of localized B and N states on the magneto-transport of (B,Ga,In)As and (Ga,In)(N,As)
AU - Teubert, J.
AU - Klar, P. J.
AU - Heimbrodt, W.
AU - Gottschalch, V.
AU - Lindsay, A.
AU - O'Reilly, E. P.
PY - 2007/1
Y1 - 2007/1
N2 - Magneto-transport properties of n- and p-type (B,Ga,In)As and (Ga,In)(N,As) were studied in the temperature range from 2 to 300 K and in magnetic fields up to 10 T and at hydrostatic pressures up to 16 kbar. The magneto-transport in (B,Ga,In)As and (Ga,In)(N,As) is very similar. P-type samples show normal semiconductor behaviour whereas the electron transport in both alloys is strongly affected by the interaction of the free carriers with the density of states of localized B and N impurity states, respectively.
AB - Magneto-transport properties of n- and p-type (B,Ga,In)As and (Ga,In)(N,As) were studied in the temperature range from 2 to 300 K and in magnetic fields up to 10 T and at hydrostatic pressures up to 16 kbar. The magneto-transport in (B,Ga,In)As and (Ga,In)(N,As) is very similar. P-type samples show normal semiconductor behaviour whereas the electron transport in both alloys is strongly affected by the interaction of the free carriers with the density of states of localized B and N impurity states, respectively.
UR - https://www.scopus.com/pages/publications/33847014837
U2 - 10.1002/pssb.200672540
DO - 10.1002/pssb.200672540
M3 - Article
AN - SCOPUS:33847014837
SN - 0370-1972
VL - 244
SP - 431
EP - 436
JO - Physica Status Solidi (B): Basic Research
JF - Physica Status Solidi (B): Basic Research
IS - 1
ER -