Effect of nitrogen incorporation on the structural, optical and dielectric properties of reactive sputter grown ITO films

M. Gartner; H. Stroescu; A. Marin; P. Osiceanu; M. Anastasescu; M. Stoica; M. Nicolescu; M. Duta; S. Preda; E. Aperathitis; A. Pantazis; V. Kampylafka; M. Modreanu; M. Zaharescu

doi:10.1016/j.apsusc.2014.05.208

Effect of nitrogen incorporation on the structural, optical and dielectric properties of reactive sputter grown ITO films

M. Gartner
, H. Stroescu
, A. Marin
, P. Osiceanu
, M. Anastasescu
, M. Stoica
, M. Nicolescu
, M. Duta
, S. Preda
, E. Aperathitis
, A. Pantazis
, V. Kampylafka
, M. Modreanu
, M. Zaharescu

Research output: Contribution to journal › Article › peer-review

Abstract

The changes in the optical, microstructural and electrical properties, following the nitrogen incorporation into indium tin oxide thin films are investigated. The films are formed by r.f. sputtering from an indium-tin-oxide (80% In ₂ O ₃ -20% SnO ₂ ) target in a mixture of Ar and N ₂ plasma (75% N ₂ -25% Ar and 100% N ₂ respectively) on fused silica glass substrate. The impact of rapid thermal annealing (up to 500 °C, in N ₂ ambient) on the properties of indium tin oxynitride (ITON) thin films is also reported. The UV-vis-NIR ellipsometry (SE) characterization of ITON films was performed assuming several realistic approaches based on various oscillator models, using a chemical composition gradient depth profiling, in agreement with the X-ray photoelectron spectroscopy measurements. The Hall measurements show that the ITON films prepared by r.f. sputtering in 75% N ₂ and annealed at 500 °C behave as degenerate semiconductors. X-ray diffraction analysis proved that ITON thin films retain an amorphous structure even after RTA at 500 °C in N ₂ ambient and atomic force microscopy showed the formation of continuous and smooth ITON thin films, with a morphology consisting in quasispherical nanometric particles.

Original language	Undefined/Unknown
Pages (from-to)	311-319
Number of pages	9
Journal	Applied Surface Science
Volume	313
DOIs	https://doi.org/10.1016/j.apsusc.2014.05.208
Publication status	Published - 15 Sep 2014

Keywords

Hall measurements
ITON
r.f. sputtering
Spectroscopic ellipsometry
Surface chemistry
Surface morphology

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10.1016/j.apsusc.2014.05.208

Cite this

Gartner, M., Stroescu, H., Marin, A., Osiceanu, P., Anastasescu, M., Stoica, M., Nicolescu, M., Duta, M., Preda, S., Aperathitis, E., Pantazis, A., Kampylafka, V., Modreanu, M., & Zaharescu, M. (2014). Effect of nitrogen incorporation on the structural, optical and dielectric properties of reactive sputter grown ITO films. Applied Surface Science, 313, 311-319. https://doi.org/10.1016/j.apsusc.2014.05.208

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title = "Effect of nitrogen incorporation on the structural, optical and dielectric properties of reactive sputter grown ITO films",

abstract = " The changes in the optical, microstructural and electrical properties, following the nitrogen incorporation into indium tin oxide thin films are investigated. The films are formed by r.f. sputtering from an indium-tin-oxide (80\% In 2 O 3 -20\% SnO 2 ) target in a mixture of Ar and N 2 plasma (75\% N 2 -25\% Ar and 100\% N 2 respectively) on fused silica glass substrate. The impact of rapid thermal annealing (up to 500 °C, in N 2 ambient) on the properties of indium tin oxynitride (ITON) thin films is also reported. The UV-vis-NIR ellipsometry (SE) characterization of ITON films was performed assuming several realistic approaches based on various oscillator models, using a chemical composition gradient depth profiling, in agreement with the X-ray photoelectron spectroscopy measurements. The Hall measurements show that the ITON films prepared by r.f. sputtering in 75\% N 2 and annealed at 500 °C behave as degenerate semiconductors. X-ray diffraction analysis proved that ITON thin films retain an amorphous structure even after RTA at 500 °C in N 2 ambient and atomic force microscopy showed the formation of continuous and smooth ITON thin films, with a morphology consisting in quasispherical nanometric particles.",

keywords = "Hall measurements, ITON, r.f. sputtering, Spectroscopic ellipsometry, Surface chemistry, Surface morphology",

author = "M. Gartner and H. Stroescu and A. Marin and P. Osiceanu and M. Anastasescu and M. Stoica and M. Nicolescu and M. Duta and S. Preda and E. Aperathitis and A. Pantazis and V. Kampylafka and M. Modreanu and M. Zaharescu",

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month = sep,

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doi = "10.1016/j.apsusc.2014.05.208",

language = "Undefined/Unknown",

volume = "313",

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journal = "Applied Surface Science",

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Gartner, M, Stroescu, H, Marin, A, Osiceanu, P, Anastasescu, M, Stoica, M, Nicolescu, M, Duta, M, Preda, S, Aperathitis, E, Pantazis, A, Kampylafka, V, Modreanu, M & Zaharescu, M 2014, 'Effect of nitrogen incorporation on the structural, optical and dielectric properties of reactive sputter grown ITO films', Applied Surface Science, vol. 313, pp. 311-319. https://doi.org/10.1016/j.apsusc.2014.05.208

TY - JOUR

T1 - Effect of nitrogen incorporation on the structural, optical and dielectric properties of reactive sputter grown ITO films

AU - Gartner, M.

AU - Stroescu, H.

AU - Marin, A.

AU - Osiceanu, P.

AU - Anastasescu, M.

AU - Stoica, M.

AU - Nicolescu, M.

AU - Duta, M.

AU - Preda, S.

AU - Aperathitis, E.

AU - Pantazis, A.

AU - Kampylafka, V.

AU - Modreanu, M.

AU - Zaharescu, M.

PY - 2014/9/15

Y1 - 2014/9/15

N2 - The changes in the optical, microstructural and electrical properties, following the nitrogen incorporation into indium tin oxide thin films are investigated. The films are formed by r.f. sputtering from an indium-tin-oxide (80% In 2 O 3 -20% SnO 2 ) target in a mixture of Ar and N 2 plasma (75% N 2 -25% Ar and 100% N 2 respectively) on fused silica glass substrate. The impact of rapid thermal annealing (up to 500 °C, in N 2 ambient) on the properties of indium tin oxynitride (ITON) thin films is also reported. The UV-vis-NIR ellipsometry (SE) characterization of ITON films was performed assuming several realistic approaches based on various oscillator models, using a chemical composition gradient depth profiling, in agreement with the X-ray photoelectron spectroscopy measurements. The Hall measurements show that the ITON films prepared by r.f. sputtering in 75% N 2 and annealed at 500 °C behave as degenerate semiconductors. X-ray diffraction analysis proved that ITON thin films retain an amorphous structure even after RTA at 500 °C in N 2 ambient and atomic force microscopy showed the formation of continuous and smooth ITON thin films, with a morphology consisting in quasispherical nanometric particles.

AB - The changes in the optical, microstructural and electrical properties, following the nitrogen incorporation into indium tin oxide thin films are investigated. The films are formed by r.f. sputtering from an indium-tin-oxide (80% In 2 O 3 -20% SnO 2 ) target in a mixture of Ar and N 2 plasma (75% N 2 -25% Ar and 100% N 2 respectively) on fused silica glass substrate. The impact of rapid thermal annealing (up to 500 °C, in N 2 ambient) on the properties of indium tin oxynitride (ITON) thin films is also reported. The UV-vis-NIR ellipsometry (SE) characterization of ITON films was performed assuming several realistic approaches based on various oscillator models, using a chemical composition gradient depth profiling, in agreement with the X-ray photoelectron spectroscopy measurements. The Hall measurements show that the ITON films prepared by r.f. sputtering in 75% N 2 and annealed at 500 °C behave as degenerate semiconductors. X-ray diffraction analysis proved that ITON thin films retain an amorphous structure even after RTA at 500 °C in N 2 ambient and atomic force microscopy showed the formation of continuous and smooth ITON thin films, with a morphology consisting in quasispherical nanometric particles.

KW - Hall measurements

KW - ITON

KW - r.f. sputtering

KW - Spectroscopic ellipsometry

KW - Surface chemistry

KW - Surface morphology

UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-84904809297&partnerID=MN8TOARS

UR - https://www.scopus.com/pages/publications/84904809297

U2 - 10.1016/j.apsusc.2014.05.208

DO - 10.1016/j.apsusc.2014.05.208

M3 - Article

SN - 0169-4332

VL - 313

SP - 311

EP - 319

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Effect of nitrogen incorporation on the structural, optical and dielectric properties of reactive sputter grown ITO films

Abstract

Keywords

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