Effect of strain on the deformation potentials in Ge-like SiGe

We calculate the effects of strain on the intra- and intervalley electronphonon matrix elements of Ge-like SiGe. Second-order terms of the strain are added to the intravalley deformation potentials and calculated by the frozen-phonon approach using first-principles electronic structure methods. The intervalley matrix elements of the strained crystal are calculated using density functional perturbation theory. The effects of the change in these elements with strain prove to be negligible compared to the boost brought about by the loss of intervalley scattering.