Effect of strain relaxation and exciton localization on performance of 350-nm AlInGaN quaternary light-emitting diodes

T. Wang; G. Raviprakash; F. Ranalli; C. N. Harrison; J. Bai; J. P.R. David; P. J. Parbrook; J. P. Ao; Y. Ohno

doi:10.1063/1.1877816

Effect of strain relaxation and exciton localization on performance of 350-nm AlInGaN quaternary light-emitting diodes

T. Wang
, G. Raviprakash
, F. Ranalli
, C. N. Harrison
, J. Bai
, J. P.R. David
, P. J. Parbrook
, J. P. Ao
, Y. Ohno

Research output: Contribution to journal › Article › peer-review

Abstract

The optical and structural properties of AlInGaN quaternary single and multiple quantum-well structures have been investigated by means of photoluminescence and x-ray diffraction. This comparative study of single quantum-well (SQW) and multiple quantum-well (MQW) structures was carried out in terms of the exciton localization effect and the strain relaxation. A detailed analysis indicated that 13% strain relaxation occurs in the MQW compared to the SQW, which is assumed to be fully strained. Furthermore, the AlInGaN SQW structure showed a stronger localization effect than the MQW. Both these effects result in enhanced emission efficiency for the SQW structure, indicating that it is better suited as the active region for ultraviolet light-emitting diodes (UV-LEDs). Finally, the UV-LEDs with an emission wavelength of about 350 nm based on such SQW and MQW active regions were grown. The output power of the SQW UV-LEDs is around 2.3 times higher than that of MQW UV-LEDs.

Original language	English
Article number	083104
Journal	Journal of Applied Physics
Volume	97
Issue number	8
DOIs	https://doi.org/10.1063/1.1877816
Publication status	Published - 27 Apr 2005
Externally published	Yes

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10.1063/1.1877816

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title = "Effect of strain relaxation and exciton localization on performance of 350-nm AlInGaN quaternary light-emitting diodes",

abstract = "The optical and structural properties of AlInGaN quaternary single and multiple quantum-well structures have been investigated by means of photoluminescence and x-ray diffraction. This comparative study of single quantum-well (SQW) and multiple quantum-well (MQW) structures was carried out in terms of the exciton localization effect and the strain relaxation. A detailed analysis indicated that 13\% strain relaxation occurs in the MQW compared to the SQW, which is assumed to be fully strained. Furthermore, the AlInGaN SQW structure showed a stronger localization effect than the MQW. Both these effects result in enhanced emission efficiency for the SQW structure, indicating that it is better suited as the active region for ultraviolet light-emitting diodes (UV-LEDs). Finally, the UV-LEDs with an emission wavelength of about 350 nm based on such SQW and MQW active regions were grown. The output power of the SQW UV-LEDs is around 2.3 times higher than that of MQW UV-LEDs.",

author = "T. Wang and G. Raviprakash and F. Ranalli and Harrison, \{C. N.\} and J. Bai and David, \{J. P.R.\} and Parbrook, \{P. J.\} and Ao, \{J. P.\} and Y. Ohno",

year = "2005",

month = apr,

day = "27",

doi = "10.1063/1.1877816",

language = "English",

volume = "97",

journal = "Journal of Applied Physics",

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publisher = "American Institute of Physics",

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TY - JOUR

T1 - Effect of strain relaxation and exciton localization on performance of 350-nm AlInGaN quaternary light-emitting diodes

AU - Wang, T.

AU - Raviprakash, G.

AU - Ranalli, F.

AU - Harrison, C. N.

AU - Bai, J.

AU - David, J. P.R.

AU - Parbrook, P. J.

AU - Ao, J. P.

AU - Ohno, Y.

PY - 2005/4/27

Y1 - 2005/4/27

N2 - The optical and structural properties of AlInGaN quaternary single and multiple quantum-well structures have been investigated by means of photoluminescence and x-ray diffraction. This comparative study of single quantum-well (SQW) and multiple quantum-well (MQW) structures was carried out in terms of the exciton localization effect and the strain relaxation. A detailed analysis indicated that 13% strain relaxation occurs in the MQW compared to the SQW, which is assumed to be fully strained. Furthermore, the AlInGaN SQW structure showed a stronger localization effect than the MQW. Both these effects result in enhanced emission efficiency for the SQW structure, indicating that it is better suited as the active region for ultraviolet light-emitting diodes (UV-LEDs). Finally, the UV-LEDs with an emission wavelength of about 350 nm based on such SQW and MQW active regions were grown. The output power of the SQW UV-LEDs is around 2.3 times higher than that of MQW UV-LEDs.

AB - The optical and structural properties of AlInGaN quaternary single and multiple quantum-well structures have been investigated by means of photoluminescence and x-ray diffraction. This comparative study of single quantum-well (SQW) and multiple quantum-well (MQW) structures was carried out in terms of the exciton localization effect and the strain relaxation. A detailed analysis indicated that 13% strain relaxation occurs in the MQW compared to the SQW, which is assumed to be fully strained. Furthermore, the AlInGaN SQW structure showed a stronger localization effect than the MQW. Both these effects result in enhanced emission efficiency for the SQW structure, indicating that it is better suited as the active region for ultraviolet light-emitting diodes (UV-LEDs). Finally, the UV-LEDs with an emission wavelength of about 350 nm based on such SQW and MQW active regions were grown. The output power of the SQW UV-LEDs is around 2.3 times higher than that of MQW UV-LEDs.

UR - https://www.scopus.com/pages/publications/21444434112

U2 - 10.1063/1.1877816

DO - 10.1063/1.1877816

M3 - Article

AN - SCOPUS:21444434112

SN - 0021-8979

VL - 97

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

M1 - 083104

ER -

Effect of strain relaxation and exciton localization on performance of 350-nm AlInGaN quaternary light-emitting diodes

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