@inproceedings{362d645b9e8b4e6cba9a7df6fb307bae,
title = "Effective-mass model of surface scattering in locally oxidized Si nanowires",
abstract = "We present a simple model to describe the lowest-subbands surface scattering in locally oxidized silicon nanowires grown in the [110] direction. To this end, we employ an atomistically scaled effective mass model projected from a three-dimensional effective mass equation and apply a quantum transport formalism to calculate the conductance for typical potential profiles. Comparison of our results with hole-transport calculations using atomistic models in conjuction with Density Functional Theory (DFT) points to an intra-subband scattering mechanism from a potential well.",
keywords = "Intraband scattering, Oxidation, Silicon nanowires",
author = "P. Drouvelis and G. Fagas",
year = "2009",
doi = "10.1109/ULIS.2009.4897584",
language = "English",
isbn = "9781424437054",
series = "Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009",
pages = "253--256",
booktitle = "Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009",
note = "10th International Conference on ULtimate Integration of Silicon, ULIS 2009 ; Conference date: 18-03-2009 Through 20-03-2009",
}