Effects of active surface nitridation on the properties of high permittivity films deposited by UV-assisted CVD

B. J. O'Sullivan; E. O'Connor; R. Howley; P. K. Hurley; J. Y. Zhang; N. Kaliwoh; Q. Fang; I. W. Boyd; C. Dubourdieu; M. A. Audier; J. P. Sénateur; H. O. Davies; T. J. Leedham; A. C. Jones; B. Semmache

doi:10.1051/jp4:20011142

Effects of active surface nitridation on the properties of high permittivity films deposited by UV-assisted CVD

B. J. O'Sullivan
, E. O'Connor
, R. Howley
, P. K. Hurley
, J. Y. Zhang
, N. Kaliwoh
, Q. Fang
, I. W. Boyd
, C. Dubourdieu
, M. A. Audier
, J. P. Sénateur
, H. O. Davies
, T. J. Leedham
, A. C. Jones
, B. Semmache

University College London

Research output: Contribution to journal › Article › peer-review

Abstract

An in situ low temperature chemical vapour deposition (CVD) system, featuring surface nitridation, dielectric layer deposition and post deposition anneal is presented. Processing is performed under the influence of ultra-violet radiation. After a range of nitridation treatments, Ta₂O₅ films are deposited and the effects of the N₂O step on the dielectric films are analysed. From the electrical analysis performed, the nitridation step reduces the SiO₂ equivalent thickness and leakage currents flowing, while also increasing the effective breakdown field of the films. Transmission electron microscopy (TEM) analysis reveals a thinner interface layer between substrate and dielectric, with increasing nitridation time.

Original language	English
Pages (from-to)	Pr11/261-Pr11/265
Journal	Journal De Physique. IV : JP
Volume	11
Issue number	11
DOIs	https://doi.org/10.1051/jp4:20011142
Publication status	Published - Dec 2001
Externally published	Yes
Event	Internatinal Conference on Thin Film Deposition of Oxide Multilayers Hybrid Structures TEDOM 2 - Austrans, France Duration: 18 Oct 2001 → 19 Oct 2001

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O'Sullivan, B. J., O'Connor, E., Howley, R., Hurley, P. K., Zhang, J. Y., Kaliwoh, N., Fang, Q., Boyd, I. W., Dubourdieu, C., Audier, M. A., Sénateur, J. P., Davies, H. O., Leedham, T. J., Jones, A. C., & Semmache, B. (2001). Effects of active surface nitridation on the properties of high permittivity films deposited by UV-assisted CVD. Journal De Physique. IV : JP, 11(11), Pr11/261-Pr11/265. https://doi.org/10.1051/jp4:20011142

@article{cf2b4c802a6849029912520665461fb1,

title = "Effects of active surface nitridation on the properties of high permittivity films deposited by UV-assisted CVD",

abstract = "An in situ low temperature chemical vapour deposition (CVD) system, featuring surface nitridation, dielectric layer deposition and post deposition anneal is presented. Processing is performed under the influence of ultra-violet radiation. After a range of nitridation treatments, Ta2O5 films are deposited and the effects of the N2O step on the dielectric films are analysed. From the electrical analysis performed, the nitridation step reduces the SiO2 equivalent thickness and leakage currents flowing, while also increasing the effective breakdown field of the films. Transmission electron microscopy (TEM) analysis reveals a thinner interface layer between substrate and dielectric, with increasing nitridation time.",

author = "O'Sullivan, \{B. J.\} and E. O'Connor and R. Howley and Hurley, \{P. K.\} and Zhang, \{J. Y.\} and N. Kaliwoh and Q. Fang and Boyd, \{I. W.\} and C. Dubourdieu and Audier, \{M. A.\} and S{\'e}nateur, \{J. P.\} and Davies, \{H. O.\} and Leedham, \{T. J.\} and Jones, \{A. C.\} and B. Semmache",

year = "2001",

month = dec,

doi = "10.1051/jp4:20011142",

language = "English",

volume = "11",

pages = "Pr11/261--Pr11/265",

journal = "Journal De Physique. IV : JP",

issn = "1155-4339",

publisher = "EDP Sciences",

number = "11",

note = "Internatinal Conference on Thin Film Deposition of Oxide Multilayers Hybrid Structures TEDOM 2 ; Conference date: 18-10-2001 Through 19-10-2001",

}

O'Sullivan, BJ, O'Connor, E, Howley, R, Hurley, PK, Zhang, JY, Kaliwoh, N, Fang, Q, Boyd, IW, Dubourdieu, C, Audier, MA, Sénateur, JP, Davies, HO, Leedham, TJ, Jones, AC & Semmache, B 2001, 'Effects of active surface nitridation on the properties of high permittivity films deposited by UV-assisted CVD', Journal De Physique. IV : JP, vol. 11, no. 11, pp. Pr11/261-Pr11/265. https://doi.org/10.1051/jp4:20011142

TY - JOUR

T1 - Effects of active surface nitridation on the properties of high permittivity films deposited by UV-assisted CVD

AU - O'Sullivan, B. J.

AU - O'Connor, E.

AU - Howley, R.

AU - Hurley, P. K.

AU - Zhang, J. Y.

AU - Kaliwoh, N.

AU - Fang, Q.

AU - Boyd, I. W.

AU - Dubourdieu, C.

AU - Audier, M. A.

AU - Sénateur, J. P.

AU - Davies, H. O.

AU - Leedham, T. J.

AU - Jones, A. C.

AU - Semmache, B.

PY - 2001/12

Y1 - 2001/12

N2 - An in situ low temperature chemical vapour deposition (CVD) system, featuring surface nitridation, dielectric layer deposition and post deposition anneal is presented. Processing is performed under the influence of ultra-violet radiation. After a range of nitridation treatments, Ta2O5 films are deposited and the effects of the N2O step on the dielectric films are analysed. From the electrical analysis performed, the nitridation step reduces the SiO2 equivalent thickness and leakage currents flowing, while also increasing the effective breakdown field of the films. Transmission electron microscopy (TEM) analysis reveals a thinner interface layer between substrate and dielectric, with increasing nitridation time.

AB - An in situ low temperature chemical vapour deposition (CVD) system, featuring surface nitridation, dielectric layer deposition and post deposition anneal is presented. Processing is performed under the influence of ultra-violet radiation. After a range of nitridation treatments, Ta2O5 films are deposited and the effects of the N2O step on the dielectric films are analysed. From the electrical analysis performed, the nitridation step reduces the SiO2 equivalent thickness and leakage currents flowing, while also increasing the effective breakdown field of the films. Transmission electron microscopy (TEM) analysis reveals a thinner interface layer between substrate and dielectric, with increasing nitridation time.

UR - https://www.scopus.com/pages/publications/0035710093

U2 - 10.1051/jp4:20011142

DO - 10.1051/jp4:20011142

M3 - Article

AN - SCOPUS:0035710093

SN - 1155-4339

VL - 11

SP - Pr11/261-Pr11/265

JO - Journal De Physique. IV : JP

JF - Journal De Physique. IV : JP

IS - 11

T2 - Internatinal Conference on Thin Film Deposition of Oxide Multilayers Hybrid Structures TEDOM 2

Y2 - 18 October 2001 through 19 October 2001

ER -

Effects of active surface nitridation on the properties of high permittivity films deposited by UV-assisted CVD

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