Effects of depletion on the emission from individual InGaN dots

B. Sherliker; M. P. Halsall; P. D. Buckle; P. J. Parbrook; T. Wang

doi:10.1063/1.2186973

Effects of depletion on the emission from individual InGaN dots

B. Sherliker
, M. P. Halsall
, P. D. Buckle
, P. J. Parbrook
, T. Wang

Research output: Contribution to journal › Article › peer-review

Abstract

We report a photoluminescence (PL) study of the effects of carrier depletion on the electronic states of InGaN quantum dots. Samples were fabricated into mesa devices with top Schottky contacts and back ohmic contacts. Submicrometer apertures were created lithographically. Capacitance-voltage measurements of the devices suggest that the dots are fully depleted when they are unbiased. Micro-PL studies of individual dots show narrow linewidths under zero or reverse bias conditions. Forward biasing of the junction results in broadening of the dot levels due to the populating of nearby conduction band states in the underlying quantum well.

Original language	English
Article number	122115
Journal	Applied Physics Letters
Volume	88
Issue number	12
DOIs	https://doi.org/10.1063/1.2186973
Publication status	Published - 20 Mar 2006
Externally published	Yes

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10.1063/1.2186973

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title = "Effects of depletion on the emission from individual InGaN dots",

abstract = "We report a photoluminescence (PL) study of the effects of carrier depletion on the electronic states of InGaN quantum dots. Samples were fabricated into mesa devices with top Schottky contacts and back ohmic contacts. Submicrometer apertures were created lithographically. Capacitance-voltage measurements of the devices suggest that the dots are fully depleted when they are unbiased. Micro-PL studies of individual dots show narrow linewidths under zero or reverse bias conditions. Forward biasing of the junction results in broadening of the dot levels due to the populating of nearby conduction band states in the underlying quantum well.",

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AU - Sherliker, B.

AU - Halsall, M. P.

AU - Buckle, P. D.

AU - Parbrook, P. J.

AU - Wang, T.

PY - 2006/3/20

Y1 - 2006/3/20

N2 - We report a photoluminescence (PL) study of the effects of carrier depletion on the electronic states of InGaN quantum dots. Samples were fabricated into mesa devices with top Schottky contacts and back ohmic contacts. Submicrometer apertures were created lithographically. Capacitance-voltage measurements of the devices suggest that the dots are fully depleted when they are unbiased. Micro-PL studies of individual dots show narrow linewidths under zero or reverse bias conditions. Forward biasing of the junction results in broadening of the dot levels due to the populating of nearby conduction band states in the underlying quantum well.

AB - We report a photoluminescence (PL) study of the effects of carrier depletion on the electronic states of InGaN quantum dots. Samples were fabricated into mesa devices with top Schottky contacts and back ohmic contacts. Submicrometer apertures were created lithographically. Capacitance-voltage measurements of the devices suggest that the dots are fully depleted when they are unbiased. Micro-PL studies of individual dots show narrow linewidths under zero or reverse bias conditions. Forward biasing of the junction results in broadening of the dot levels due to the populating of nearby conduction band states in the underlying quantum well.

UR - https://www.scopus.com/pages/publications/33645524365

U2 - 10.1063/1.2186973

DO - 10.1063/1.2186973

M3 - Article

AN - SCOPUS:33645524365

SN - 0003-6951

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 122115

ER -

Effects of depletion on the emission from individual InGaN dots

Abstract

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