Effects of Fowler-Nordheim stress on interface trap density and emission cross sections in n-MOSFET's studied by three-level charge pumping

Xiao Jie Yuan; Mike Kivi; Stephen Taylor; Paul Hurley

doi:10.1109/55.491841

Effects of Fowler-Nordheim stress on interface trap density and emission cross sections in n-MOSFET's studied by three-level charge pumping

Xiao Jie Yuan
, Mike Kivi
, Stephen Taylor
, Paul Hurley

IEEE
Chartered Semiconductor Manufacturing Ltd.
University of Liverpool

Research output: Contribution to journal › Article › peer-review

Abstract

High field Fowler-Nordheim (F-N) stress effects on interface-trap dencity and emission cross sections in n-MOSFKT's have been studied using three-levels charge pumping (3LCP). The results show that 3LCP is sensitive to changes in trap cross section as a function of energy in the bandgap. An asymmetric change in electron and hole emission cross sections following F-N tunnelling injection is found. The work also provides further insight into the influence of hot electrons on interface trap generation in MOSFKT's in both the upper and lower bandgap following electrical stress.

Original language	English
Pages (from-to)	239-241
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	17
Issue number	5
DOIs	https://doi.org/10.1109/55.491841
Publication status	Published - May 1996

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title = "Effects of Fowler-Nordheim stress on interface trap density and emission cross sections in n-MOSFET's studied by three-level charge pumping",

abstract = "High field Fowler-Nordheim (F-N) stress effects on interface-trap dencity and emission cross sections in n-MOSFKT's have been studied using three-levels charge pumping (3LCP). The results show that 3LCP is sensitive to changes in trap cross section as a function of energy in the bandgap. An asymmetric change in electron and hole emission cross sections following F-N tunnelling injection is found. The work also provides further insight into the influence of hot electrons on interface trap generation in MOSFKT's in both the upper and lower bandgap following electrical stress.",

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AU - Yuan, Xiao Jie

AU - Kivi, Mike

AU - Taylor, Stephen

AU - Hurley, Paul

PY - 1996/5

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N2 - High field Fowler-Nordheim (F-N) stress effects on interface-trap dencity and emission cross sections in n-MOSFKT's have been studied using three-levels charge pumping (3LCP). The results show that 3LCP is sensitive to changes in trap cross section as a function of energy in the bandgap. An asymmetric change in electron and hole emission cross sections following F-N tunnelling injection is found. The work also provides further insight into the influence of hot electrons on interface trap generation in MOSFKT's in both the upper and lower bandgap following electrical stress.

AB - High field Fowler-Nordheim (F-N) stress effects on interface-trap dencity and emission cross sections in n-MOSFKT's have been studied using three-levels charge pumping (3LCP). The results show that 3LCP is sensitive to changes in trap cross section as a function of energy in the bandgap. An asymmetric change in electron and hole emission cross sections following F-N tunnelling injection is found. The work also provides further insight into the influence of hot electrons on interface trap generation in MOSFKT's in both the upper and lower bandgap following electrical stress.

UR - https://www.scopus.com/pages/publications/0030151674

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DO - 10.1109/55.491841

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 5

ER -

Effects of Fowler-Nordheim stress on interface trap density and emission cross sections in n-MOSFET's studied by three-level charge pumping

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