@inbook{670786b1bdd94b558faad9078b8c7ed6,
title = "Effects of high-energy ion irradiation on the conduction characteristics of HfO2-based MOSFET devices",
abstract = "MOSFET devices with HfO2 gate oxides were irradiated with high-energy (120 MeV) Au ions. It was observed mat the irradiation can cause both little or severe damage to the structures under test We associate these effects with me soft and hard breakdown failure modes occurring in ultra-min oxides. In both cases mere is a large increment of me transistor off current. If the damage is not catastrophic a decrease of me transconductance and drain current characteristics can also be detected. This indicates that me transistor is still operational but with worst performance parameters.",
author = "F. Palumbo and E. Miranda and K. Cherkaoui and Hurley, \{P. K.\} and Negara, \{M. A.\}",
year = "2010",
doi = "10.1149/1.3474176",
language = "English",
isbn = "9781566778190",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "1",
pages = "327--332",
booktitle = "Microelectronics Technology and Devices, SBMicro 2010",
address = "United States",
edition = "1",
}