Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks

E. Miranda; J. Martin-Martinez; E. O'Connor; G. Hughes; P. Casey; K. Cherkaoui; S. Monaghan; R. Long; D. O'Connell; P. K. Hurley

doi:10.1016/j.microrel.2009.06.017

Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks

E. Miranda
, J. Martin-Martinez
, E. O'Connor
, G. Hughes
, P. Casey
, K. Cherkaoui
, S. Monaghan
, R. Long
, D. O'Connell
, P. K. Hurley

Research output: Contribution to journal › Article › peer-review

Abstract

The degradation dynamics and post-breakdown current-voltage (I-V) characteristics of magnesium oxide (MgO) layers grown on n and p-type indium phosphide (InP) substrates subjected to electrical stress were investigated. We show that the current-time (I-t) characteristics during degradation can be described by a power-law model I(t) = I₀t^-α, where I₀ and α are constants. It is reported that the leakage current associated with the soft breakdown (SBD) failure mode follows the typical voltage dependence I = aV^b, where a and b are constants, for both injection polarities but in a wider voltage range compared with the SiO₂/Si system. It is also shown that the hard breakdown (HBD) current is remarkably high, involving large ON-OFF fluctuations that resemble the phenomenon of resistive switching previously observed in a wide variety of metal oxides.

Original language	English
Pages (from-to)	1052-1055
Number of pages	4
Journal	Microelectronics Reliability
Volume	49
Issue number	9-11
DOIs	https://doi.org/10.1016/j.microrel.2009.06.017
Publication status	Published - Sep 2009

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10.1016/j.microrel.2009.06.017

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title = "Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks",

abstract = "The degradation dynamics and post-breakdown current-voltage (I-V) characteristics of magnesium oxide (MgO) layers grown on n and p-type indium phosphide (InP) substrates subjected to electrical stress were investigated. We show that the current-time (I-t) characteristics during degradation can be described by a power-law model I(t) = I0t-α, where I0 and α are constants. It is reported that the leakage current associated with the soft breakdown (SBD) failure mode follows the typical voltage dependence I = aVb, where a and b are constants, for both injection polarities but in a wider voltage range compared with the SiO2/Si system. It is also shown that the hard breakdown (HBD) current is remarkably high, involving large ON-OFF fluctuations that resemble the phenomenon of resistive switching previously observed in a wide variety of metal oxides.",

author = "E. Miranda and J. Martin-Martinez and E. O'Connor and G. Hughes and P. Casey and K. Cherkaoui and S. Monaghan and R. Long and D. O'Connell and Hurley, \{P. K.\}",

year = "2009",

month = sep,

doi = "10.1016/j.microrel.2009.06.017",

language = "English",

volume = "49",

pages = "1052--1055",

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TY - JOUR

T1 - Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks

AU - Miranda, E.

AU - Martin-Martinez, J.

AU - O'Connor, E.

AU - Hughes, G.

AU - Casey, P.

AU - Cherkaoui, K.

AU - Monaghan, S.

AU - Long, R.

AU - O'Connell, D.

AU - Hurley, P. K.

PY - 2009/9

Y1 - 2009/9

N2 - The degradation dynamics and post-breakdown current-voltage (I-V) characteristics of magnesium oxide (MgO) layers grown on n and p-type indium phosphide (InP) substrates subjected to electrical stress were investigated. We show that the current-time (I-t) characteristics during degradation can be described by a power-law model I(t) = I0t-α, where I0 and α are constants. It is reported that the leakage current associated with the soft breakdown (SBD) failure mode follows the typical voltage dependence I = aVb, where a and b are constants, for both injection polarities but in a wider voltage range compared with the SiO2/Si system. It is also shown that the hard breakdown (HBD) current is remarkably high, involving large ON-OFF fluctuations that resemble the phenomenon of resistive switching previously observed in a wide variety of metal oxides.

AB - The degradation dynamics and post-breakdown current-voltage (I-V) characteristics of magnesium oxide (MgO) layers grown on n and p-type indium phosphide (InP) substrates subjected to electrical stress were investigated. We show that the current-time (I-t) characteristics during degradation can be described by a power-law model I(t) = I0t-α, where I0 and α are constants. It is reported that the leakage current associated with the soft breakdown (SBD) failure mode follows the typical voltage dependence I = aVb, where a and b are constants, for both injection polarities but in a wider voltage range compared with the SiO2/Si system. It is also shown that the hard breakdown (HBD) current is remarkably high, involving large ON-OFF fluctuations that resemble the phenomenon of resistive switching previously observed in a wide variety of metal oxides.

UR - https://www.scopus.com/pages/publications/69249217766

U2 - 10.1016/j.microrel.2009.06.017

DO - 10.1016/j.microrel.2009.06.017

M3 - Article

AN - SCOPUS:69249217766

SN - 0026-2714

VL - 49

SP - 1052

EP - 1055

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 9-11

ER -

Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks

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