@inbook{f1f9c61bebe84fa59c8aef592b861317,
title = "Effects of the semiconductor substrate material on the post-breakdown current of MgO dielectric layers",
abstract = "The post-breakdown (BD) current-voltage (I-V) characteristics in MgO/Si and MgO/InP stacks with metal gate were investigated. We show that both stacks exhibit the soft and hard BD conduction modes and that the magnitude of the post-BD currents depends statistically on the substrate material, being larger in the case of the InP samples. This is contrary to what happens with the current in the fresh devices, which irrespective of the InP surface treatment, is larger for the Si samples. A comparative analysis of the post-BD conduction characteristics and direct evidence of the localized thermal effects on the metal gate electrode of both structures is also presented.",
author = "E. Miranda and E. O'Connor and G. Hughes and P. Casey and K. Cherkaoui and S. Monaghan and Long, \{R. D.\} and D. O'Connell and Hurley, \{P. K.\}",
year = "2009",
doi = "10.1149/1.3206608",
language = "English",
isbn = "9781566777438",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "6",
pages = "79--86",
booktitle = "ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7",
address = "United States",
edition = "6",
note = "7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society ; Conference date: 05-10-2009 Through 07-10-2009",
}