Efficient parameter extraction techniques for a new surface-potential-based MOS model for RF applications

W. Liang; R. Van Langevelde; K. G. McCarthy; A. Mathewson

Efficient parameter extraction techniques for a new surface-potential-based MOS model for RF applications

W. Liang
, R. Van Langevelde
, K. G. McCarthy
, A. Mathewson

School of Engineering and Architecture

University College Cork

Research output: Contribution to conference › Paper › peer-review

Abstract

Efficient parameter extraction techniques for a new surface-potential-based MOS model are outlined. The new model is suitable for RF CMOS design because it has improved modelling of surface potential, mobility and conductance. The extraction techniques are based on analytical manipulation of the model equations and allow parameters to be extracted using as few as 12 measurements per device.

Original language	English
Pages	141-145
Number of pages	5
Publication status	Published - 2001
Event	ICMTS 2001. 2001 International Conference on Microelectronic Test Structures - Kobe, Japan Duration: 19 Mar 2001 → 22 Mar 2001

Conference

Conference	ICMTS 2001. 2001 International Conference on Microelectronic Test Structures
Country/Territory	Japan
City	Kobe
Period	19/03/01 → 22/03/01

Cite this

@conference{fc6849bc614742e390cda3fcb05a6a01,

title = "Efficient parameter extraction techniques for a new surface-potential-based MOS model for RF applications",

abstract = "Efficient parameter extraction techniques for a new surface-potential-based MOS model are outlined. The new model is suitable for RF CMOS design because it has improved modelling of surface potential, mobility and conductance. The extraction techniques are based on analytical manipulation of the model equations and allow parameters to be extracted using as few as 12 measurements per device.",

author = "W. Liang and \{Van Langevelde\}, R. and McCarthy, \{K. G.\} and A. Mathewson",

year = "2001",

language = "English",

pages = "141--145",

note = "ICMTS 2001. 2001 International Conference on Microelectronic Test Structures ; Conference date: 19-03-2001 Through 22-03-2001",

}

TY - CONF

T1 - Efficient parameter extraction techniques for a new surface-potential-based MOS model for RF applications

AU - Liang, W.

AU - Van Langevelde, R.

AU - McCarthy, K. G.

AU - Mathewson, A.

PY - 2001

Y1 - 2001

N2 - Efficient parameter extraction techniques for a new surface-potential-based MOS model are outlined. The new model is suitable for RF CMOS design because it has improved modelling of surface potential, mobility and conductance. The extraction techniques are based on analytical manipulation of the model equations and allow parameters to be extracted using as few as 12 measurements per device.

AB - Efficient parameter extraction techniques for a new surface-potential-based MOS model are outlined. The new model is suitable for RF CMOS design because it has improved modelling of surface potential, mobility and conductance. The extraction techniques are based on analytical manipulation of the model equations and allow parameters to be extracted using as few as 12 measurements per device.

UR - https://www.scopus.com/pages/publications/0034876093

M3 - Paper

AN - SCOPUS:0034876093

SP - 141

EP - 145

T2 - ICMTS 2001. 2001 International Conference on Microelectronic Test Structures

Y2 - 19 March 2001 through 22 March 2001

ER -

Efficient parameter extraction techniques for a new surface-potential-based MOS model for RF applications

Abstract

Conference

Other files and links

Fingerprint

Cite this