Electric-Field-Induced Metal-Insulator Transition for Low-Power and Ultrafast Nanoelectronics

Mircea Dragoman; Daniela Dragoman; Mircea Modreanu; Silviu Vulpe; Cosmin Romanitan; Martino Aldrigo; Adrian Dinescu

doi:10.3390/nano15080589

Electric-Field-Induced Metal-Insulator Transition for Low-Power and Ultrafast Nanoelectronics

Mircea Dragoman
, Daniela Dragoman
, Mircea Modreanu
, Silviu Vulpe
, Cosmin Romanitan
, Martino Aldrigo
, Adrian Dinescu

Research output: Contribution to journal › Article › peer-review

Abstract

We present here a comprehensive review of various classes of electric-field-induced reversible Mott metal-insulator materials, which have many applications in ultrafast switches, reconfigurable high-frequency devices up to THz, and photonics. Various types of Mott transistors are analyzed, and their applications are discussed. This paper introduces new materials that demonstrate the Mott transition at very low DC voltage levels, induced by an external electric field. The final section of the paper examines ferroelectric Mott transistors and these innovative ferroelectric Mott materials.

Original language	Undefined/Unknown
Article number	589
Journal	Nanomaterials
Volume	15
Issue number	8
DOIs	https://doi.org/10.3390/nano15080589
Publication status	Published - 11 Apr 2025

Keywords

ferroelectrics
Mott materials
transistors

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10.3390/nano15080589

Cite this

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title = "Electric-Field-Induced Metal-Insulator Transition for Low-Power and Ultrafast Nanoelectronics",

abstract = "We present here a comprehensive review of various classes of electric-field-induced reversible Mott metal-insulator materials, which have many applications in ultrafast switches, reconfigurable high-frequency devices up to THz, and photonics. Various types of Mott transistors are analyzed, and their applications are discussed. This paper introduces new materials that demonstrate the Mott transition at very low DC voltage levels, induced by an external electric field. The final section of the paper examines ferroelectric Mott transistors and these innovative ferroelectric Mott materials.",

keywords = "ferroelectrics, Mott materials, transistors",

author = "Mircea Dragoman and Daniela Dragoman and Mircea Modreanu and Silviu Vulpe and Cosmin Romanitan and Martino Aldrigo and Adrian Dinescu",

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AU - Dragoman, Mircea

AU - Dragoman, Daniela

AU - Modreanu, Mircea

AU - Vulpe, Silviu

AU - Romanitan, Cosmin

AU - Aldrigo, Martino

AU - Dinescu, Adrian

PY - 2025/4/11

Y1 - 2025/4/11

N2 - We present here a comprehensive review of various classes of electric-field-induced reversible Mott metal-insulator materials, which have many applications in ultrafast switches, reconfigurable high-frequency devices up to THz, and photonics. Various types of Mott transistors are analyzed, and their applications are discussed. This paper introduces new materials that demonstrate the Mott transition at very low DC voltage levels, induced by an external electric field. The final section of the paper examines ferroelectric Mott transistors and these innovative ferroelectric Mott materials.

AB - We present here a comprehensive review of various classes of electric-field-induced reversible Mott metal-insulator materials, which have many applications in ultrafast switches, reconfigurable high-frequency devices up to THz, and photonics. Various types of Mott transistors are analyzed, and their applications are discussed. This paper introduces new materials that demonstrate the Mott transition at very low DC voltage levels, induced by an external electric field. The final section of the paper examines ferroelectric Mott transistors and these innovative ferroelectric Mott materials.

KW - ferroelectrics

KW - Mott materials

KW - transistors

UR - https://doi.org/10.3390/nano15080589

UR - https://www.scopus.com/pages/publications/105003568361

U2 - 10.3390/nano15080589

DO - 10.3390/nano15080589

M3 - Article

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VL - 15

JO - Nanomaterials

JF - Nanomaterials

IS - 8

M1 - 589

ER -

Electric-Field-Induced Metal-Insulator Transition for Low-Power and Ultrafast Nanoelectronics

Abstract

Keywords

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