@inbook{daec3194d98a42dc8e3dbfebd46480e1,
title = "Electrical activity of extended defects in III-V semiconductors",
abstract = "This paper gives an overview on the electrical activity of extended defects in III-V materials, combining different analysis methods, which are based on lifetime extraction from diode current-voltage characteristics and deep-level studies using Deep-Level Transient Spectroscopy (DLTS). To that purpose p+n junction diodes have been fabricated in Ino.53Gao.47As hetero-epitaxial layers on semi-insulating InP or GaAs substrates. By depositing a strained buffer layer, the Extended Defect Density (EDD) can be varied over several decades, enabling the study of the electrical impact in the same range. It will be shown that the generation and recombination (GR) lifetimes of the Ino.53Gao.47As layers become dominated by the EDs for densities above about 3×106 cm-2, whereby the dominant GR level moves closer to the mid gap position. This is supported by DLTS, showing the occurrence of specific electron traps for defective epi layers, which exhibit a capture behavior which is typical for extended defects.",
author = "E. Simoen and Hsu, \{P. C.\} and Y. Mols and B. Kunert and R. Langer and C. Merckling and A. Alian and N. Waldron and G. Eneman and N. Collaert and M. Heyns and C. Claeys",
note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; 11th Symposium on Semiconductor Process Integration - 236th ECS Meeting ; Conference date: 13-10-2019 Through 17-10-2019",
year = "2019",
doi = "10.1149/09204.0021ecst",
language = "English",
isbn = "9781607688785",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "4",
pages = "21--31",
editor = "J. Murota and C. Claeys and H. Iwai and M. Tao and S. Deleonibus and A. Mai and K. Shiojima and Y. Cao",
booktitle = "Semiconductor Process Integration 11",
address = "United States",
edition = "4",
}