Electrical and optical characterisation of GeON layers with high-κ gate stacks on germanium for future MOSFETs

S. N. Ali Murad; P. T. Baine; J. H. Montgomery; D. W. McNeill; S. J.N. Mitchell; B. M. Armstrong; M. Modreanu

doi:10.1149/1.3700879

Electrical and optical characterisation of GeON layers with high-κ gate stacks on germanium for future MOSFETs

S. N. Ali Murad
, P. T. Baine
, J. H. Montgomery
, D. W. McNeill
, S. J.N. Mitchell
, B. M. Armstrong
, M. Modreanu

Queen's University Belfast

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

GeON has been investigated as an interfacial layer for high-κ gate stacks. Thermally grown GeON layers have been prepared at 550°C and compared with plasma GeON layers prepared at 300°C, The optical band gap of thermally-grown GeON was also determined by spectroscopic ellipsometry to be 4.86 eV. Electrical characterisation of MOS capacitors has yielded interface state densities (D_it) of less than 10¹² cm ^-2eV^-1 for all devices using the conductance method.

Original language	English
Title of host publication	Dielectrics for Nanosystems 5
Subtitle of host publication	Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices
Publisher	Electrochemical Society Inc.
Pages	137-144
Number of pages	8
Edition	3
ISBN (Electronic)	9781607683131
ISBN (Print)	9781566779555
DOIs	https://doi.org/10.1149/1.3700879
Publication status	Published - 2012
Event	5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting - Seattle, WA, United States Duration: 6 May 2012 → 10 May 2012

Publication series

Name	ECS Transactions
Number	3
Volume	45
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting
Country/Territory	United States
City	Seattle, WA
Period	6/05/12 → 10/05/12

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10.1149/1.3700879

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Ali Murad, S. N., Baine, P. T., Montgomery, J. H., McNeill, D. W., Mitchell, S. J. N., Armstrong, B. M., & Modreanu, M. (2012). Electrical and optical characterisation of GeON layers with high-κ gate stacks on germanium for future MOSFETs. In Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices (3 ed., pp. 137-144). (ECS Transactions; Vol. 45, No. 3). Electrochemical Society Inc.. https://doi.org/10.1149/1.3700879

Ali Murad, S. N. ; Baine, P. T. ; Montgomery, J. H. et al. / Electrical and optical characterisation of GeON layers with high-κ gate stacks on germanium for future MOSFETs. Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. 3. ed. Electrochemical Society Inc., 2012. pp. 137-144 (ECS Transactions; 3).

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title = "Electrical and optical characterisation of GeON layers with high-κ gate stacks on germanium for future MOSFETs",

abstract = "GeON has been investigated as an interfacial layer for high-κ gate stacks. Thermally grown GeON layers have been prepared at 550°C and compared with plasma GeON layers prepared at 300°C, The optical band gap of thermally-grown GeON was also determined by spectroscopic ellipsometry to be 4.86 eV. Electrical characterisation of MOS capacitors has yielded interface state densities (Dit) of less than 1012 cm -2eV-1 for all devices using the conductance method.",

author = "\{Ali Murad\}, \{S. N.\} and Baine, \{P. T.\} and Montgomery, \{J. H.\} and McNeill, \{D. W.\} and Mitchell, \{S. J.N.\} and Armstrong, \{B. M.\} and M. Modreanu",

year = "2012",

doi = "10.1149/1.3700879",

language = "English",

isbn = "9781566779555",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "3",

pages = "137--144",

booktitle = "Dielectrics for Nanosystems 5",

address = "United States",

edition = "3",

note = "5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting ; Conference date: 06-05-2012 Through 10-05-2012",

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Ali Murad, SN, Baine, PT, Montgomery, JH, McNeill, DW, Mitchell, SJN, Armstrong, BM & Modreanu, M 2012, Electrical and optical characterisation of GeON layers with high-κ gate stacks on germanium for future MOSFETs. in Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. 3 edn, ECS Transactions, no. 3, vol. 45, Electrochemical Society Inc., pp. 137-144, 5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting, Seattle, WA, United States, 6/05/12. https://doi.org/10.1149/1.3700879

Electrical and optical characterisation of GeON layers with high-κ gate stacks on germanium for future MOSFETs. / Ali Murad, S. N.; Baine, P. T.; Montgomery, J. H. et al.
Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. 3. ed. Electrochemical Society Inc., 2012. p. 137-144 (ECS Transactions; Vol. 45, No. 3).

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

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AU - Mitchell, S. J.N.

AU - Armstrong, B. M.

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Ali Murad SN, Baine PT, Montgomery JH, McNeill DW, Mitchell SJN, Armstrong BM et al. Electrical and optical characterisation of GeON layers with high-κ gate stacks on germanium for future MOSFETs. In Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. 3 ed. Electrochemical Society Inc. 2012. p. 137-144. (ECS Transactions; 3). doi: 10.1149/1.3700879

Electrical and optical characterisation of GeON layers with high-κ gate stacks on germanium for future MOSFETs

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