Electrical and optical properties of AlGaN/GaN hemt structures with 2-dimensional electron gas grown by mocvd on sapphire and Si (III) substrates
- A. L. Gurskii
- , E. V. Lutsenko
- , V. N. Pavlovskii
- , V. Z. Zubialevich
- , A. V. Danil’Chik
- , K. A. Osipov
- , G. P. Yablonskii
- , A. S. Shulenkov
- , V. A. Hryshanau
- , A. I. Stognij
- , H. Kalisch
- , Y. Dikme
- , M. Fieger
- , A. Szymakowski
- , R. H. Jansen
- , B. Schineller
- , M. Heuken
- Belarus Academy of Sciences
- Minsk Research Institute of Radiomaterials
- RWTH Aachen University
- Aixtron SE
Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review