Electrical and structural characterisation of Al2O3/HfO2, MgO/HfO2 and HfO2 layers deposited by ALD on GaAs and In0. 53Ga0. 47As

A Omahony; S Monaghan; R Chiodo; IM Povey; A Blake; RE Nagle; JA Hamilton; MG Nolan; K Cherkaoui; V Djara; others

Electrical and structural characterisation of Al2O3/HfO2, MgO/HfO2 and HfO2 layers deposited by ALD on GaAs and In0. 53Ga0. 47As

A Omahony
, S Monaghan
, R Chiodo
, IM Povey
, A Blake
, RE Nagle
, JA Hamilton
, MG Nolan
, K Cherkaoui
, V Djara
, others

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Original language	Undefined/Unknown
Title of host publication	International Conference on Atomic Layer Deposition
Publication status	Published - 2010

Cite this

@inproceedings{372981974aa049e095d5b8eac7a47c81,

title = "Electrical and structural characterisation of Al2O3/HfO2, MgO/HfO2 and HfO2 layers deposited by ALD on GaAs and In0. 53Ga0. 47As",

author = "A Omahony and S Monaghan and R Chiodo and IM Povey and A Blake and RE Nagle and JA Hamilton and MG Nolan and K Cherkaoui and V Djara and others",

year = "2010",

language = "Undefined/Unknown",

booktitle = "International Conference on Atomic Layer Deposition",

}

TY - GEN

T1 - Electrical and structural characterisation of Al2O3/HfO2, MgO/HfO2 and HfO2 layers deposited by ALD on GaAs and In0. 53Ga0. 47As

AU - Omahony, A

AU - Monaghan, S

AU - Chiodo, R

AU - Povey, IM

AU - Blake, A

AU - Nagle, RE

AU - Hamilton, JA

AU - Nolan, MG

AU - Cherkaoui, K

AU - Djara, V

AU - others,

PY - 2010

Y1 - 2010

M3 - Conference proceeding

BT - International Conference on Atomic Layer Deposition

ER -