Electrical characterisation of InGaAs on insulator structures

K. Cherkaoui; Y. Y. Gomeniuk; N. Daix; J. O'Brien; A. Blake; K. K. Thomas; E. Pelucchi; D. O'Connell; B. Sheehan; S. Monaghan; D. Caimi; L. Czornomaz; E. Uccelli; P. K. Hurley

doi:10.1016/j.mee.2015.04.077

Electrical characterisation of InGaAs on insulator structures

K. Cherkaoui
, Y. Y. Gomeniuk
, N. Daix
, J. O'Brien
, A. Blake
, K. K. Thomas
, E. Pelucchi
, D. O'Connell
, B. Sheehan
, S. Monaghan
, D. Caimi
, L. Czornomaz
, E. Uccelli
, P. K. Hurley

Research output: Contribution to journal › Article › peer-review

Abstract

The electrical properties of Au/Ni/In_0.53Ga_0.47As/Al₂O₃/SiO₂/Si structures were investigated using capacitance voltage (C-V) analysis. The properties of the InGaAs on insulator structures were analysed by comparing the measured and the theoretical C-Vs obtained using a physics based simulation of this structure. The results show that the measured data obtained on both n-type and p-type silicon match very well the simulated data. This work also shows that this approach allows the characterisation of charges in the buried oxide as well as interface states at the bottom InGaAs/Al₂O₃ interface.

Original language	English
Pages (from-to)	63-66
Number of pages	4
Journal	Microelectronic Engineering
Volume	147
DOIs	https://doi.org/10.1016/j.mee.2015.04.077
Publication status	Published - 1 Nov 2015

Keywords

3D integration
InGaAs
Interlayer dielectric

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10.1016/j.mee.2015.04.077

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@article{734040461af9490f84103f74de857032,

title = "Electrical characterisation of InGaAs on insulator structures",

abstract = "The electrical properties of Au/Ni/In0.53Ga0.47As/Al2O3/SiO2/Si structures were investigated using capacitance voltage (C-V) analysis. The properties of the InGaAs on insulator structures were analysed by comparing the measured and the theoretical C-Vs obtained using a physics based simulation of this structure. The results show that the measured data obtained on both n-type and p-type silicon match very well the simulated data. This work also shows that this approach allows the characterisation of charges in the buried oxide as well as interface states at the bottom InGaAs/Al2O3 interface.",

keywords = "3D integration, InGaAs, Interlayer dielectric",

author = "K. Cherkaoui and Gomeniuk, \{Y. Y.\} and N. Daix and J. O'Brien and A. Blake and Thomas, \{K. K.\} and E. Pelucchi and D. O'Connell and B. Sheehan and S. Monaghan and D. Caimi and L. Czornomaz and E. Uccelli and Hurley, \{P. K.\}",

note = "Publisher Copyright: {\textcopyright} 2015 Published by Elsevier B.V.",

year = "2015",

month = nov,

day = "1",

doi = "10.1016/j.mee.2015.04.077",

language = "English",

volume = "147",

pages = "63--66",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Electrical characterisation of InGaAs on insulator structures

AU - Cherkaoui, K.

AU - Gomeniuk, Y. Y.

AU - Daix, N.

AU - O'Brien, J.

AU - Blake, A.

AU - Thomas, K. K.

AU - Pelucchi, E.

AU - O'Connell, D.

AU - Sheehan, B.

AU - Monaghan, S.

AU - Caimi, D.

AU - Czornomaz, L.

AU - Uccelli, E.

AU - Hurley, P. K.

PY - 2015/11/1

Y1 - 2015/11/1

N2 - The electrical properties of Au/Ni/In0.53Ga0.47As/Al2O3/SiO2/Si structures were investigated using capacitance voltage (C-V) analysis. The properties of the InGaAs on insulator structures were analysed by comparing the measured and the theoretical C-Vs obtained using a physics based simulation of this structure. The results show that the measured data obtained on both n-type and p-type silicon match very well the simulated data. This work also shows that this approach allows the characterisation of charges in the buried oxide as well as interface states at the bottom InGaAs/Al2O3 interface.

AB - The electrical properties of Au/Ni/In0.53Ga0.47As/Al2O3/SiO2/Si structures were investigated using capacitance voltage (C-V) analysis. The properties of the InGaAs on insulator structures were analysed by comparing the measured and the theoretical C-Vs obtained using a physics based simulation of this structure. The results show that the measured data obtained on both n-type and p-type silicon match very well the simulated data. This work also shows that this approach allows the characterisation of charges in the buried oxide as well as interface states at the bottom InGaAs/Al2O3 interface.

KW - 3D integration

KW - InGaAs

KW - Interlayer dielectric

UR - https://www.scopus.com/pages/publications/84928225856

U2 - 10.1016/j.mee.2015.04.077

DO - 10.1016/j.mee.2015.04.077

M3 - Article

AN - SCOPUS:84928225856

SN - 0167-9317

VL - 147

SP - 63

EP - 66

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

Electrical characterisation of InGaAs on insulator structures

Abstract

Keywords

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