Electrical characterisation of Pd/HfO2 MOSCAPs with/without a thin Al2O3 or MgO interface control layer deposited on GaAs or In0. 53Ga0. 47As/InP by ALD

A Omahony; S Monaghan; R Chiodo; IM Povey; A Blake; K Cherkaoui; É Oconnor; RE Nagle; RD Long; V Djara; others

Electrical characterisation of Pd/HfO2 MOSCAPs with/without a thin Al2O3 or MgO interface control layer deposited on GaAs or In0. 53Ga0. 47As/InP by ALD

A Omahony
, S Monaghan
, R Chiodo
, IM Povey
, A Blake
, K Cherkaoui
, É Oconnor
, RE Nagle
, RD Long
, V Djara
, others

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Original language	Undefined/Unknown
Title of host publication	Workshop on Dielectrics in Microelectronics
Publication status	Published - 2010

Cite this

@inproceedings{7eb80162f91841d69cfa243a6de5894c,

title = "Electrical characterisation of Pd/HfO2 MOSCAPs with/without a thin Al2O3 or MgO interface control layer deposited on GaAs or In0. 53Ga0. 47As/InP by ALD",

author = "A Omahony and S Monaghan and R Chiodo and IM Povey and A Blake and K Cherkaoui and {\'E} Oconnor and RE Nagle and RD Long and V Djara and others",

year = "2010",

language = "Undefined/Unknown",

booktitle = "Workshop on Dielectrics in Microelectronics",

}

TY - GEN

T1 - Electrical characterisation of Pd/HfO2 MOSCAPs with/without a thin Al2O3 or MgO interface control layer deposited on GaAs or In0. 53Ga0. 47As/InP by ALD

AU - Omahony, A

AU - Monaghan, S

AU - Chiodo, R

AU - Povey, IM

AU - Blake, A

AU - Cherkaoui, K

AU - Oconnor, É

AU - Nagle, RE

AU - Long, RD

AU - Djara, V

AU - others,

PY - 2010

Y1 - 2010

M3 - Conference proceeding

BT - Workshop on Dielectrics in Microelectronics

ER -