Electrical characterization of novel PMNT thin-films

Research output: Chapter in Book/Report/Conference proceedingsChapterpeer-review

Abstract

This paper presents the systematic investigation by electrical characterization of PMNT (lead magnesium niobate - lead titanate, Pb(Mg 0.33Nb0.67)0.65Ti0.35O3) thin-films with different fabrication parameters. The PMNT thin-films are processed under different conditions including annealing at various temperatures. Capacitance-voltage (C-V), current-voltage (I-V), capacitance-frequency (C-F), dissipation factor-frequency (D-F) and complex impedance-frequency (Z-F) measurements are presented.

Original languageEnglish
Title of host publication2010 International Conference on Microelectronic Test Structures, 23rd IEEE ICMTS Conference Proceedings
Pages98-101
Number of pages4
DOIs
Publication statusPublished - 2010
Event2010 International Conference on Microelectronic Test Structures, ICMTS 2010 - Hiroshima, Japan
Duration: 22 Mar 201025 Mar 2010

Publication series

NameIEEE International Conference on Microelectronic Test Structures

Conference

Conference2010 International Conference on Microelectronic Test Structures, ICMTS 2010
Country/TerritoryJapan
CityHiroshima
Period22/03/1025/03/10

Keywords

  • Dielectric constant
  • Dielectric loss tangent
  • High-κ
  • PMNT
  • Thin-film

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