Electrical characterization of top-gated molybdenum disulfide metal-oxide-semiconductor capacitors with high-k dielectrics

P. Zhao; P. B. Vyas; S. McDonnell; P. Bolshakov-Barrett; A. Azcatl; C. L. Hinkle; P. K. Hurley; R. M. Wallace; C. D. Young

doi:10.1016/j.mee.2015.04.078

Electrical characterization of top-gated molybdenum disulfide metal-oxide-semiconductor capacitors with high-k dielectrics

P. Zhao
, P. B. Vyas
, S. McDonnell
, P. Bolshakov-Barrett
, A. Azcatl
, C. L. Hinkle
, P. K. Hurley
, R. M. Wallace
, C. D. Young

University of Texas at Dallas

Research output: Contribution to journal › Article › peer-review

Abstract

Top-gated metal-oxide-semiconductor (MOS) capacitor test structures were fabricated with 30 nm HfO₂ and Al₂O₃ thin films by atomic layer deposition (ALD) on surface-functionalized, bulk molybdenum disulfide (MoS₂), and characterized with C-V and I-V measurements. The C-V results showed significantly different behavior for MoS₂ samples compared to conventional Si MOS capacitors, where the area dependence, frequency dependence, and hysteresis results demonstrate the possibility of different properties of high-k dielectrics on MoS₂. The C-V frequency dispersion suggests the existence of defects in the interfacial region of the high-k/MoS₂.

Original language	English
Pages (from-to)	151-154
Number of pages	4
Journal	Microelectronic Engineering
Volume	147
DOIs	https://doi.org/10.1016/j.mee.2015.04.078
Publication status	Published - 1 Nov 2015

Keywords

C-V
High-k dielectrics
I-V
Molybdenum disulfide (MoS<inf>2</inf>)
MOS capacitor
Top-gated
Transition metal dichalcogenide (TMD)

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10.1016/j.mee.2015.04.078

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@article{5a128c99f4b84960a28fd16e362e0971,

title = "Electrical characterization of top-gated molybdenum disulfide metal-oxide-semiconductor capacitors with high-k dielectrics",

abstract = "Top-gated metal-oxide-semiconductor (MOS) capacitor test structures were fabricated with 30 nm HfO2 and Al2O3 thin films by atomic layer deposition (ALD) on surface-functionalized, bulk molybdenum disulfide (MoS2), and characterized with C-V and I-V measurements. The C-V results showed significantly different behavior for MoS2 samples compared to conventional Si MOS capacitors, where the area dependence, frequency dependence, and hysteresis results demonstrate the possibility of different properties of high-k dielectrics on MoS2. The C-V frequency dispersion suggests the existence of defects in the interfacial region of the high-k/MoS2.",

keywords = "C-V, High-k dielectrics, I-V, Molybdenum disulfide (MoS<inf>2</inf>), MOS capacitor, Top-gated, Transition metal dichalcogenide (TMD)",

author = "P. Zhao and Vyas, \{P. B.\} and S. McDonnell and P. Bolshakov-Barrett and A. Azcatl and Hinkle, \{C. L.\} and Hurley, \{P. K.\} and Wallace, \{R. M.\} and Young, \{C. D.\}",

year = "2015",

month = nov,

day = "1",

doi = "10.1016/j.mee.2015.04.078",

language = "English",

volume = "147",

pages = "151--154",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Electrical characterization of top-gated molybdenum disulfide metal-oxide-semiconductor capacitors with high-k dielectrics

AU - Zhao, P.

AU - Vyas, P. B.

AU - McDonnell, S.

AU - Bolshakov-Barrett, P.

AU - Azcatl, A.

AU - Hinkle, C. L.

AU - Hurley, P. K.

AU - Wallace, R. M.

AU - Young, C. D.

PY - 2015/11/1

Y1 - 2015/11/1

N2 - Top-gated metal-oxide-semiconductor (MOS) capacitor test structures were fabricated with 30 nm HfO2 and Al2O3 thin films by atomic layer deposition (ALD) on surface-functionalized, bulk molybdenum disulfide (MoS2), and characterized with C-V and I-V measurements. The C-V results showed significantly different behavior for MoS2 samples compared to conventional Si MOS capacitors, where the area dependence, frequency dependence, and hysteresis results demonstrate the possibility of different properties of high-k dielectrics on MoS2. The C-V frequency dispersion suggests the existence of defects in the interfacial region of the high-k/MoS2.

AB - Top-gated metal-oxide-semiconductor (MOS) capacitor test structures were fabricated with 30 nm HfO2 and Al2O3 thin films by atomic layer deposition (ALD) on surface-functionalized, bulk molybdenum disulfide (MoS2), and characterized with C-V and I-V measurements. The C-V results showed significantly different behavior for MoS2 samples compared to conventional Si MOS capacitors, where the area dependence, frequency dependence, and hysteresis results demonstrate the possibility of different properties of high-k dielectrics on MoS2. The C-V frequency dispersion suggests the existence of defects in the interfacial region of the high-k/MoS2.

KW - C-V

KW - High-k dielectrics

KW - I-V

KW - Molybdenum disulfide (MoS<inf>2</inf>)

KW - MOS capacitor

KW - Top-gated

KW - Transition metal dichalcogenide (TMD)

UR - https://www.scopus.com/pages/publications/84928395424

U2 - 10.1016/j.mee.2015.04.078

DO - 10.1016/j.mee.2015.04.078

M3 - Article

AN - SCOPUS:84928395424

SN - 0167-9317

VL - 147

SP - 151

EP - 154

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

Electrical characterization of top-gated molybdenum disulfide metal-oxide-semiconductor capacitors with high-k dielectrics

Abstract

Keywords

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