Electrical properties of chlorine-doped ZnO thin films grown by MOCVD

E. Chikoidze; M. Modreanu; V. Sallet; O. Gorochov; P. Galtier

doi:10.1002/pssa.200723192

Electrical properties of chlorine-doped ZnO thin films grown by MOCVD

E. Chikoidze
, M. Modreanu
, V. Sallet
, O. Gorochov
, P. Galtier

Université Paris-Saclay

Research output: Contribution to journal › Article › peer-review

Abstract

Chlorine-doped ZnO thin films were grown by MOCVD on sapphire and fused silica. Chlorine is incorporated in substitution for oxygen and acts as a donor, leading to an increase of electron concentration. Transport properties were studied for samples with different chlorine content. Hall effect measurements show the increase of electron carrier concentration and decrease of electron mobility on increasing the amount of chlorine incorporated in ZnO. Carrier concentrations as high as 6.5 × 10 ²⁰ cm ^-3 has been achieved with a resistivity of p= 1.4 × 10 ^-3 Ω cm for layers deposited on sapphire substrate.

Original language	English
Pages (from-to)	1575-1579
Number of pages	5
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	205
Issue number	7
DOIs	https://doi.org/10.1002/pssa.200723192
Publication status	Published - Jul 2008

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title = "Electrical properties of chlorine-doped ZnO thin films grown by MOCVD",

abstract = "Chlorine-doped ZnO thin films were grown by MOCVD on sapphire and fused silica. Chlorine is incorporated in substitution for oxygen and acts as a donor, leading to an increase of electron concentration. Transport properties were studied for samples with different chlorine content. Hall effect measurements show the increase of electron carrier concentration and decrease of electron mobility on increasing the amount of chlorine incorporated in ZnO. Carrier concentrations as high as 6.5 × 10 20 cm -3 has been achieved with a resistivity of p= 1.4 × 10 -3 Ω cm for layers deposited on sapphire substrate.",

author = "E. Chikoidze and M. Modreanu and V. Sallet and O. Gorochov and P. Galtier",

year = "2008",

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T1 - Electrical properties of chlorine-doped ZnO thin films grown by MOCVD

AU - Chikoidze, E.

AU - Modreanu, M.

AU - Sallet, V.

AU - Gorochov, O.

AU - Galtier, P.

PY - 2008/7

Y1 - 2008/7

N2 - Chlorine-doped ZnO thin films were grown by MOCVD on sapphire and fused silica. Chlorine is incorporated in substitution for oxygen and acts as a donor, leading to an increase of electron concentration. Transport properties were studied for samples with different chlorine content. Hall effect measurements show the increase of electron carrier concentration and decrease of electron mobility on increasing the amount of chlorine incorporated in ZnO. Carrier concentrations as high as 6.5 × 10 20 cm -3 has been achieved with a resistivity of p= 1.4 × 10 -3 Ω cm for layers deposited on sapphire substrate.

AB - Chlorine-doped ZnO thin films were grown by MOCVD on sapphire and fused silica. Chlorine is incorporated in substitution for oxygen and acts as a donor, leading to an increase of electron concentration. Transport properties were studied for samples with different chlorine content. Hall effect measurements show the increase of electron carrier concentration and decrease of electron mobility on increasing the amount of chlorine incorporated in ZnO. Carrier concentrations as high as 6.5 × 10 20 cm -3 has been achieved with a resistivity of p= 1.4 × 10 -3 Ω cm for layers deposited on sapphire substrate.

UR - https://www.scopus.com/pages/publications/54249153768

U2 - 10.1002/pssa.200723192

DO - 10.1002/pssa.200723192

M3 - Article

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JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 7

ER -

Electrical properties of chlorine-doped ZnO thin films grown by MOCVD

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