@inbook{05f82cb40e3540c689ed991e8766cd8b,
title = "Electrical properties of creep-resistant nanocrystalline gold-vanadium thin films at millimeter-wave frequencies",
abstract = "This paper reports on the mechanical and electrical properties of creep-resistant nanocrystalline gold-vanadium (Au-V) thin films that are employed in electrostatically- A ctuated microcorrugated diaphragms (MCDs) of frequency-reconfigurable all-silicon cavity filters. Solid solution strengthened Au-V MCDs featuring the lowest stress relaxation to date were built and experimentally tested. In a 3-hour stress relaxation experiment under a 20-μm constant displacement, they exhibited a 6.2\% decay and a rate of stress relaxation (at the 3rd hour) that is 9.7×/5.4× lower than that of previously reported Au/Au-V MCDs. Grounded coplanar waveguide transmission lines were built and measured on a quartz substrate in order to experimentally evaluate the electrical properties (sheet resistance: Rs, conductivity: σ, and attenuation factor: α) of the Au-V thin films through DC and RF measurements in the 20-40 GHz band. These were specified as follows for the annealed Au-V (2.2 atomic percent of V) thin films: Rs = 339.10 m/□, σ = 5.9 MS/m, α = 0.327-0.410 dB/mm.",
keywords = "Electrical conductivity, gold-vanadium, grounded coplanar waveguide, insertion loss, millimeter-wave, nanocrystal-line, stress relaxation, thin film",
author = "Jin Li and Zhengan Yang and Hickle, \{Mark D.\} and Dimitra Psychogiou and Dimitrios Peroulis",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 16th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2016 ; Conference date: 24-01-2016 Through 27-01-2016",
year = "2016",
month = mar,
day = "31",
doi = "10.1109/SIRF.2016.7445457",
language = "English",
series = "SiRF 2016 - 2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "21--23",
booktitle = "SiRF 2016 - 2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems",
address = "United States",
}