Electrical properties of high-k LaLuO3 gate oxide for SOI MOSFETs

YY Gomeniuk; YV Gomeniuk; A Nazarov; PK Hurley; Karim Cherkaoui; Scott Monaghan; Per Erik Hellström; HDB Gottlob; J Schubert; JMJ Lopes

Electrical properties of high-k LaLuO3 gate oxide for SOI MOSFETs

YY Gomeniuk
, YV Gomeniuk
, A Nazarov
, PK Hurley
, Karim Cherkaoui
, Scott Monaghan
, Per Erik Hellström
, HDB Gottlob
, J Schubert
, JMJ Lopes

Tyndall MicroNano Systems

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Journal	Advanced Materials Research
Publication status	Published - 2011

Cite this

@article{4a86e52c60344cc2be7db68760a3e25f,

title = "Electrical properties of high-k LaLuO3 gate oxide for SOI MOSFETs",

author = "YY Gomeniuk and YV Gomeniuk and A Nazarov and PK Hurley and Karim Cherkaoui and Scott Monaghan and Hellstr{\"o}m, \{Per Erik\} and HDB Gottlob and J Schubert and JMJ Lopes",

year = "2011",

language = "Undefined/Unknown",

journal = "Advanced Materials Research",

}

TY - JOUR

T1 - Electrical properties of high-k LaLuO3 gate oxide for SOI MOSFETs

AU - Gomeniuk, YY

AU - Gomeniuk, YV

AU - Nazarov, A

AU - Hurley, PK

AU - Cherkaoui, Karim

AU - Monaghan, Scott

AU - Hellström, Per Erik

AU - Gottlob, HDB

AU - Schubert, J

AU - Lopes, JMJ

PY - 2011

Y1 - 2011

M3 - Article

JO - Advanced Materials Research

JF - Advanced Materials Research

ER -