@inbook{adbc46723df240f896d71495a656a5ac,
title = "Electrical properties of high-k LaLuO3 gate oxide for SOI MOSFETs",
abstract = "The paper presents the results of electrical characterization of MOS capacitors and SOI MOSFETs with novel high-? LaLuO3 dielectric as a gate oxide. The energy distribution of interface state density at LaLuO 3/Si interface is presented and typical maxima of 1.2×10 11 eV-1cm-2 was found at about 0.25 eV from the silicon valence band. The output and transfer characteristics of the n- and p-MOSFET (channel length and width were 1 μm and 50 μm, respectively) are presented. The front channel mobility appeared to be 126 cm2V -1s-1 and 70 cm2V-1s-1 for n- and p-MOSFET, respectively. The front channel threshold voltages as well as the density of states at the back interface are presented.",
keywords = "Channel mobility, High-k oxide, Interface states density, LaLuO, Lanthanum lutetium oxide, Molecular beam deposition MBD, MOSFET, SOI, Threshold voltage, Transconductance",
author = "Gomeniuk, \{Y. Y.\} and Gomeniuk, \{Y. V.\} and Nazarov, \{A. N.\} and Hurley, \{P. K.\} and K. Cherkaoui and S. Monaghan and Hellstr{\"o}m, \{P. E.\} and Gottlob, \{H. D.B.\} and J. Schubert and Lopes, \{J. M.J.\}",
year = "2011",
doi = "10.4028/www.scientific.net/AMR.276.87",
language = "English",
isbn = "9783037851784",
series = "Advanced Materials Research",
pages = "87--93",
booktitle = "Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices",
note = "6th International Workshop on Semiconductor-on-Insulator Materials and Devices ; Conference date: 24-10-2010 Through 28-10-2010",
}