@inbook{97ed51abdfce41c9ae0d4d0e290aeb42,
title = "Electrical properties of LaLuO3/Si(100) structures prepared by molecular beam deposition",
abstract = "The paper presents the results of electrical characterization in the wide temperature range (120-320 K) of the interface and bulk properties of high-k LaLuO3 dielectric deposited by molecular beam deposition (MBD) on silicon substrate. The energy distribution of interface state density is presented and typical maxima of 1.2×1011 and 2.5×10 11 eV-1 cm-2 were found at about 0.25-0.3 eV from the silicon valence band. The charge carrier transport through the dielectric at the forward bias was found to occur via Poole-Frenkel mechanism, while variable range hopping conduction (Mott's law) controls the current at the reverse bias.",
author = "Gomeniuk, \{Y. Y.\} and Gomeniuk, \{Y. V.\} and Nazarov, \{A. N.\} and Hurley, \{P. K.\} and K. Cherkaoui and S. Monaghan and Gottlob, \{H. D.B.\} and M. Schmidt and J. Schubert and Lopes, \{J. M.J.\} and O. Engstr{\"o}m",
year = "2010",
doi = "10.1149/1.3481609",
language = "English",
isbn = "9781566778220",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "3",
pages = "221--227",
booktitle = "Physics and Technology of High-k Materials 8",
address = "United States",
edition = "3",
}