Electrical properties of n-n ZnSe/In0.04Ga0.96As(001) heterojunctions

C. Cai; M. I. Nathan; S. Rubini; L. Sorba; B. Mueller; E. Pelucchi; A. Franciosi

doi:10.1063/1.122560

Electrical properties of n-n ZnSe/In_0.04Ga_0.96As(001) heterojunctions

C. Cai
, M. I. Nathan
, S. Rubini
, L. Sorba
, B. Mueller
, E. Pelucchi
, A. Franciosi

Research output: Contribution to journal › Article › peer-review

Abstract

Lattice-matched n-n ZnSe/In_0.04Ga_0.96As heterojunctions were studied by means of current density versus voltage (J-V) and capacitance versus voltage (C-V) measurements. The resulting characteristics indicate that the behavior of this n-n heterostructure can be explained by a back-to-back double Schottky diode model. The value of conduction band discontinuity (ΔE_c) is found to be 0.10-0.12 eV.

Original language	English
Pages (from-to)	2033-2035
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	14
DOIs	https://doi.org/10.1063/1.122560
Publication status	Published - 1998
Externally published	Yes

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10.1063/1.122560

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title = "Electrical properties of n-n ZnSe/In0.04Ga0.96As(001) heterojunctions",

abstract = "Lattice-matched n-n ZnSe/In0.04Ga0.96As heterojunctions were studied by means of current density versus voltage (J-V) and capacitance versus voltage (C-V) measurements. The resulting characteristics indicate that the behavior of this n-n heterostructure can be explained by a back-to-back double Schottky diode model. The value of conduction band discontinuity (ΔEc) is found to be 0.10-0.12 eV.",

author = "C. Cai and Nathan, \{M. I.\} and S. Rubini and L. Sorba and B. Mueller and E. Pelucchi and A. Franciosi",

year = "1998",

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journal = "Applied Physics Letters",

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T1 - Electrical properties of n-n ZnSe/In0.04Ga0.96As(001) heterojunctions

AU - Cai, C.

AU - Nathan, M. I.

AU - Rubini, S.

AU - Sorba, L.

AU - Mueller, B.

AU - Pelucchi, E.

AU - Franciosi, A.

PY - 1998

Y1 - 1998

N2 - Lattice-matched n-n ZnSe/In0.04Ga0.96As heterojunctions were studied by means of current density versus voltage (J-V) and capacitance versus voltage (C-V) measurements. The resulting characteristics indicate that the behavior of this n-n heterostructure can be explained by a back-to-back double Schottky diode model. The value of conduction band discontinuity (ΔEc) is found to be 0.10-0.12 eV.

AB - Lattice-matched n-n ZnSe/In0.04Ga0.96As heterojunctions were studied by means of current density versus voltage (J-V) and capacitance versus voltage (C-V) measurements. The resulting characteristics indicate that the behavior of this n-n heterostructure can be explained by a back-to-back double Schottky diode model. The value of conduction band discontinuity (ΔEc) is found to be 0.10-0.12 eV.

UR - https://www.scopus.com/pages/publications/21544480024

U2 - 10.1063/1.122560

DO - 10.1063/1.122560

M3 - Article

AN - SCOPUS:21544480024

SN - 0003-6951

VL - 73

SP - 2033

EP - 2035

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Electrical properties of n-n ZnSe/In_0.04Ga_0.96As(001) heterojunctions

Abstract

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