Electrically active defects at the interface between (100)si and hafnium dioxide thin films

P. K. Hurley; K. Cherkaoui

doi:10.1109/ICMEL.2006.1650895

Electrically active defects at the interface between (100)si and hafnium dioxide thin films

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

Abstract

The density and energy distribution of electrically active interface defects in the (100)Si/SiO_x/HfO₂ system are presented. Experimental results are analysed for HfO₂ thin films deposited by atomic layer deposition and metal-organic chemical vapour deposition on (100)Si substrates. The paper discusses the origin of the interface states, and their passivation in hydrogen over the temperature range 350-550°C.

Original language	English
Title of host publication	2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings
Publisher	IEEE Computer Society
Pages	53-58
Number of pages	6
ISBN (Print)	1424401178, 9781424401178
DOIs	https://doi.org/10.1109/ICMEL.2006.1650895
Publication status	Published - 2006
Event	2006 25th International Conference on Microelectronics, MIEL 2006 - Belgrade, Serbia Duration: 14 May 2006 → 17 May 2006

Publication series

Name	2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings

Conference

Conference	2006 25th International Conference on Microelectronics, MIEL 2006
Country/Territory	Serbia
City	Belgrade
Period	14/05/06 → 17/05/06

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10.1109/ICMEL.2006.1650895

Cite this

Hurley, P. K., & Cherkaoui, K. (2006). Electrically active defects at the interface between (100)si and hafnium dioxide thin films. In 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings (pp. 53-58). Article 1650895 (2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings). IEEE Computer Society. https://doi.org/10.1109/ICMEL.2006.1650895

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title = "Electrically active defects at the interface between (100)si and hafnium dioxide thin films",

abstract = "The density and energy distribution of electrically active interface defects in the (100)Si/SiOx/HfO2 system are presented. Experimental results are analysed for HfO2 thin films deposited by atomic layer deposition and metal-organic chemical vapour deposition on (100)Si substrates. The paper discusses the origin of the interface states, and their passivation in hydrogen over the temperature range 350-550°C.",

author = "Hurley, \{P. K.\} and K. Cherkaoui",

year = "2006",

doi = "10.1109/ICMEL.2006.1650895",

language = "English",

isbn = "1424401178",

series = "2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings",

publisher = "IEEE Computer Society",

pages = "53--58",

booktitle = "2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings",

address = "United States",

note = "2006 25th International Conference on Microelectronics, MIEL 2006 ; Conference date: 14-05-2006 Through 17-05-2006",

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Hurley, PK & Cherkaoui, K 2006, Electrically active defects at the interface between (100)si and hafnium dioxide thin films. in 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings., 1650895, 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings, IEEE Computer Society, pp. 53-58, 2006 25th International Conference on Microelectronics, MIEL 2006, Belgrade, Serbia, 14/05/06. https://doi.org/10.1109/ICMEL.2006.1650895

Electrically active defects at the interface between (100)si and hafnium dioxide thin films. / Hurley, P. K.; Cherkaoui, K.
2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings. IEEE Computer Society, 2006. p. 53-58 1650895 (2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings).

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

TY - CHAP

T1 - Electrically active defects at the interface between (100)si and hafnium dioxide thin films

AU - Hurley, P. K.

AU - Cherkaoui, K.

PY - 2006

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N2 - The density and energy distribution of electrically active interface defects in the (100)Si/SiOx/HfO2 system are presented. Experimental results are analysed for HfO2 thin films deposited by atomic layer deposition and metal-organic chemical vapour deposition on (100)Si substrates. The paper discusses the origin of the interface states, and their passivation in hydrogen over the temperature range 350-550°C.

AB - The density and energy distribution of electrically active interface defects in the (100)Si/SiOx/HfO2 system are presented. Experimental results are analysed for HfO2 thin films deposited by atomic layer deposition and metal-organic chemical vapour deposition on (100)Si substrates. The paper discusses the origin of the interface states, and their passivation in hydrogen over the temperature range 350-550°C.

UR - https://www.scopus.com/pages/publications/77956529821

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DO - 10.1109/ICMEL.2006.1650895

M3 - Chapter

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SN - 9781424401178

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BT - 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings

PB - IEEE Computer Society

T2 - 2006 25th International Conference on Microelectronics, MIEL 2006

Y2 - 14 May 2006 through 17 May 2006

ER -

Electrically active defects at the interface between (100)si and hafnium dioxide thin films

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