@inbook{ed6bfa0394ef4eb296c137475d8a127c,
title = "Electrically active defects in Al2O3-InGaAs MOS stacks at cryogenic temperatures",
abstract = "The effects of defects in In0.47Ga0.53As/Al2O3/Ni metal-oxide-semiconductor (MOS) stacks at cryogenic temperatures are investigated. The MOS stacks exhibit a hysteresis in the capacitance-voltage (CV) curve, both at room temperature and at 100K, indicating the presence of effective charge capture/emission dynamics in the oxide even at cryogenic temperatures. Border traps (BTs) in the Al2O3 close to the In0.47Ga0.53As/Al2O3 interface are recognized as the best candidate for explaining the experimental CV. The hysteresis shape and its temperature dependence are used to profile the oxide defects' properties, which allow correctly predicting the MOS stacks CV and conductance-voltage (GV) frequency dispersions and gaining insights on the hysteresis dynamics.",
keywords = "AlO, capacitance, cryogenic, hysteresis, InGaAs",
author = "\{La Torraca\}, Paolo and Andrea Padovani and Wernersson, \{Lars Erik\} and Karim Cherkaoui and Paul Hurley and Luca Larcher",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 IEEE International Integrated Reliability Workshop, IIRW 2023 ; Conference date: 08-10-2023 Through 12-10-2023",
year = "2023",
doi = "10.1109/IIRW59383.2023.10477706",
language = "English",
series = "IEEE International Integrated Reliability Workshop Final Report",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2023 IEEE International Integrated Reliability Workshop, IIRW 2023",
address = "United States",
}