Electrically Active Interface Defects in the (100)Si/SiOx/HfO2/TiN system: Origin and Passivation

Paul Hurley

doi:10.1149/ma2006-02/22/1092

Electrically Active Interface Defects in the (100)Si/SiOx/HfO2/TiN system: Origin and Passivation

Paul Hurley

Research output: Contribution to journal › Article › peer-review

Original language	English
Journal	Meeting Abstracts
DOIs	https://doi.org/10.1149/ma2006-02/22/1092
Publication status	Published - 2006

Keywords

Passivation
Tin
Materials science
Interface (matter)
Optoelectronics
Nanotechnology
Metallurgy
Layer (electronics)
Composite material
Capillary number
Capillary action

Access to Document

10.1149/ma2006-02/22/1092

https://openalex.org/W2595096802Licence: CC BY-NC-ND

Cite this

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title = "Electrically Active Interface Defects in the (100)Si/SiOx/HfO2/TiN system: Origin and Passivation",

keywords = "Passivation, Tin, Materials science, Interface (matter), Optoelectronics, Nanotechnology, Metallurgy, Layer (electronics), Composite material, Capillary number, Capillary action",

author = "Paul Hurley",

year = "2006",

doi = "10.1149/ma2006-02/22/1092",

language = "English",

journal = "Meeting Abstracts",

issn = "1091-8213",

}

TY - JOUR

T1 - Electrically Active Interface Defects in the (100)Si/SiOx/HfO2/TiN system: Origin and Passivation

AU - Hurley, Paul

PY - 2006

Y1 - 2006

KW - Passivation

KW - Tin

KW - Materials science

KW - Interface (matter)

KW - Optoelectronics

KW - Nanotechnology

KW - Metallurgy

KW - Layer (electronics)

KW - Composite material

KW - Capillary number

KW - Capillary action

U2 - 10.1149/ma2006-02/22/1092

DO - 10.1149/ma2006-02/22/1092

M3 - Article

SN - 1091-8213

JO - Meeting Abstracts

JF - Meeting Abstracts

ER -