Electrically active interface defects in the In0. 53Ga0. 47As MOS system

Vladimir Djara; TP O’Regan; Karim Cherkaoui; Michael Schmidt; Scott Monaghan; Éamon O’Connor; Ian M Povey; D O’Connell; Martyn E Pemble; Paul K Hurley

Electrically active interface defects in the In0. 53Ga0. 47As MOS system

Vladimir Djara
, TP O’Regan
, Karim Cherkaoui
, Michael Schmidt
, Scott Monaghan
, Éamon O’Connor
, Ian M Povey
, D O’Connell
, Martyn E Pemble
, Paul K Hurley

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Journal	Microelectronic Engineering
Publication status	Published - 2013

Cite this

@article{79c9592f581942448d6a036e840a593a,

title = "Electrically active interface defects in the In0. 53Ga0. 47As MOS system",

author = "Vladimir Djara and TP O{\textquoteright}Regan and Karim Cherkaoui and Michael Schmidt and Scott Monaghan and {\'E}amon O{\textquoteright}Connor and Povey, \{Ian M\} and D O{\textquoteright}Connell and Pemble, \{Martyn E\} and Hurley, \{Paul K\}",

year = "2013",

language = "Undefined/Unknown",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Electrically active interface defects in the In0. 53Ga0. 47As MOS system

AU - Djara, Vladimir

AU - O’Regan, TP

AU - Cherkaoui, Karim

AU - Schmidt, Michael

AU - Monaghan, Scott

AU - O’Connor, Éamon

AU - Povey, Ian M

AU - O’Connell, D

AU - Pemble, Martyn E

AU - Hurley, Paul K

PY - 2013

Y1 - 2013

M3 - Article

SN - 0167-9317

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -