@inproceedings{ef3a2697b3f2491a8abc3abd04ee39aa,
title = "Electrically injected GaAsBi quantum well lasers",
abstract = "GaAsBi QWs have the potential to remove inherent recombination losses thereby increasing the efficiency and reducing the temperature sensitivity of near-infrared telecommunications lasers. GaAsBi QW lasers are reported and prospects for 1550nm operation are discussed.",
author = "Sweeney, \{S. J.\} and Marko, \{I. P.\} and Jin, \{S. R.\} and K. Hild and Z. Batool and P. Ludewig and L. Natterman and Z. Bushell and W. Stolz and K. Volz and Broderick, \{C. A.\} and M. Usman and Harnedy, \{P. E.\} and Oreilly, \{E. P.\} and R. Butkute and V. Pacebutas and A. Geiutis and A. Krotkus",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014 ; Conference date: 07-09-2014 Through 10-09-2014",
year = "2014",
month = dec,
day = "16",
doi = "10.1109/ISLC.2014.173",
language = "English",
series = "Conference Digest - IEEE International Semiconductor Laser Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "80--81",
booktitle = "Conference Digest - IEEE International Semiconductor Laser Conference",
address = "United States",
}