Abstract
We report on an electrochemical process whereby regular, ordered and periodic V-grooves are etched into an InP(0 0 1) surface during constant potential anodization in a 1 mol dm-3 KOH solution in dark conditions. Transmission electron microscopy and atomic force microscopy were employed to characterize the morphological changes induced by the etch process. V-grooves with a periodicity of 0.15 μm were observed delineated by the {1 1 1} etch-stop planes and are preferentially elongated in the [1 1 0] direction. X-ray photoelectron and reflection anisotropy spectroscopies show that the terminating faces of the grooves are very ordered and In-rich. It is hoped that such textured surfaces can be employed in the realization of massively parallel quantum wire laser growth.
| Original language | English |
|---|---|
| Pages (from-to) | 1831-1839 |
| Number of pages | 9 |
| Journal | Optical Materials |
| Volume | 29 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - Aug 2007 |
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