Abstract
Thin-film thermoelectric coolers are emerging as a viable option for the on-chip temperature management of electronic and photonic integrated circuits. In this work, we demonstrate the record heat flux handling capability of electrodeposited Bi2Te3 films of 720(±60) W cm-2 at room temperature, achieved by careful control of the contact interfaces to reduce contact resistance. The characteristic parameters of a single leg thin-film devices were measured in situ, giving a Seebeck coefficient of S =-121(±6) μV K-1, thermal conductivity of κ = 0.85(±0.08) W m-1 K-1, electrical conductivity of σ = 5.2(±0.32) × 104 S m-1, and electrical contact resistivity of a10-11 ω m2. These thermoelectric parameters lead to a material ZT = 0.26(±0.04), which, for our device structure, allowed a net cooling of I Tmax = 4.4(±0.12) K. A response time of τ = 20 μs was measured experimentally. This work shows that with the correct treatment of contact interfaces, electrodeposited thin-film thermoelectrics can compete with more complicated and expensive technologies such as metal organic chemical vapor deposition (MOCVD) multilayers.
| Original language | English |
|---|---|
| Pages (from-to) | 1773-1782 |
| Number of pages | 10 |
| Journal | ACS Applied Materials and Interfaces |
| Volume | 13 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 13 Jan 2021 |
Keywords
- contact resistanceCCD-thermoreflectance
- electrodeposition
- heat flux
- thermoelectric cooler
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