@inbook{f84b788ef029477fac9d5d02024eaeea,
title = "Electroless metal deposition for IC and TSV applications",
abstract = "Ultrathin film electroless deposition of Cu and Ni is shown for IC and TSV barrier layer/interconnect applications as an alternative to vacuum based deposition techniques. Cu films of approximately 20 nm were achieved while coherent electroless Ni can be deposited to single digit nm levels. The use of self-assembled monolayers facilitates electroless deposition in high aspect ratio structures. This activation process in combination with ultrathin film barrier/seed layer deposition by electroless processing enables scaling for both IC and TSV interconnect applications.",
keywords = "Barrier layers, Deposition, Electroless, Interconnect, Metal, Thin film, TSV",
author = "Rohan, \{James F.\} and Declan Casey and Monika Zygowska and Michael Moore and Brian Shanahan",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; International 3D Systems Integration Conference, 3DIC 2014 ; Conference date: 01-12-2014 Through 03-12-2014",
year = "2014",
doi = "10.1109/3DIC.2014.7152175",
language = "English",
series = "2014 International 3D Systems Integration Conference, 3DIC 2014 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2014 International 3D Systems Integration Conference, 3DIC 2014 - Proceedings",
address = "United States",
}