Electroluminescence from a single pyramidal quantum dot in a light-emitting diode

M. H. Baier; C. Constantin; E. Pelucchi; E. Kapon

doi:10.1063/1.1687453

Electroluminescence from a single pyramidal quantum dot in a light-emitting diode

M. H. Baier
, C. Constantin
, E. Pelucchi
, E. Kapon

Swiss Federal Institute of Technology Lausanne

Research output: Contribution to journal › Article › peer-review

Abstract

The fabrication of a quantum-dot light-emitting diode (QD-LED) obtained by epitaxial growth on pyramidal recess patterns was described. The photolithography and lift-off techniques were used to define contact regions of different sizes. The process enabled to control the number of emitters and the size of the metal contacts down to a single QD with submicron contacts. The room-temperature current-voltage characteristics of the fabricated QD LED were found to exhibit a standard rectifying behavior with a turn on voltage of about 1.5 V and a breakdown voltage of about 6 V.

Original language	English
Pages (from-to)	1967-1969
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	11
DOIs	https://doi.org/10.1063/1.1687453
Publication status	Published - 15 Mar 2004
Externally published	Yes

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title = "Electroluminescence from a single pyramidal quantum dot in a light-emitting diode",

abstract = "The fabrication of a quantum-dot light-emitting diode (QD-LED) obtained by epitaxial growth on pyramidal recess patterns was described. The photolithography and lift-off techniques were used to define contact regions of different sizes. The process enabled to control the number of emitters and the size of the metal contacts down to a single QD with submicron contacts. The room-temperature current-voltage characteristics of the fabricated QD LED were found to exhibit a standard rectifying behavior with a turn on voltage of about 1.5 V and a breakdown voltage of about 6 V.",

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AU - Pelucchi, E.

AU - Kapon, E.

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Y1 - 2004/3/15

N2 - The fabrication of a quantum-dot light-emitting diode (QD-LED) obtained by epitaxial growth on pyramidal recess patterns was described. The photolithography and lift-off techniques were used to define contact regions of different sizes. The process enabled to control the number of emitters and the size of the metal contacts down to a single QD with submicron contacts. The room-temperature current-voltage characteristics of the fabricated QD LED were found to exhibit a standard rectifying behavior with a turn on voltage of about 1.5 V and a breakdown voltage of about 6 V.

AB - The fabrication of a quantum-dot light-emitting diode (QD-LED) obtained by epitaxial growth on pyramidal recess patterns was described. The photolithography and lift-off techniques were used to define contact regions of different sizes. The process enabled to control the number of emitters and the size of the metal contacts down to a single QD with submicron contacts. The room-temperature current-voltage characteristics of the fabricated QD LED were found to exhibit a standard rectifying behavior with a turn on voltage of about 1.5 V and a breakdown voltage of about 6 V.

UR - https://www.scopus.com/pages/publications/1842687741

U2 - 10.1063/1.1687453

DO - 10.1063/1.1687453

M3 - Article

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VL - 84

SP - 1967

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

Electroluminescence from a single pyramidal quantum dot in a light-emitting diode

Abstract

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