Electron beam excitation and profiling of strained CdS epilayers grown by metalorganic vapour phase epitaxy on GaAs(111)A, GaAs(100), ZnSe(100) and ZnS(100) substrates

C. Trager-Cowan; P. J. Parbrook; F. Yang; X. Chen; B. Henderson; K. P. O'Donnell; B. Cockayne; P. J. Wright

doi:10.1016/0022-0248(92)90808-V

Electron beam excitation and profiling of strained CdS epilayers grown by metalorganic vapour phase epitaxy on GaAs(111)A, GaAs(100), ZnSe(100) and ZnS(100) substrates

C. Trager-Cowan
, P. J. Parbrook
, F. Yang
, X. Chen
, B. Henderson
, K. P. O'Donnell
, B. Cockayne
, P. J. Wright

Defence Science and Technology Laboratory

Research output: Contribution to journal › Article › peer-review

Abstract

The variation in the penetration depth of an electron beam with energy is used to profile the strain in various CdS epilayers. The red shift of the excitonic luminescence with increasing beam energy is consistent with an increase of compressive strain with depth.

Original language	English
Pages (from-to)	532-535
Number of pages	4
Journal	Journal of Crystal Growth
Volume	117
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(92)90808-V
Publication status	Published - 2 Feb 1992

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Trager-Cowan, C., Parbrook, P. J., Yang, F., Chen, X., Henderson, B., O'Donnell, K. P., Cockayne, B., & Wright, P. J. (1992). Electron beam excitation and profiling of strained CdS epilayers grown by metalorganic vapour phase epitaxy on GaAs(111)A, GaAs(100), ZnSe(100) and ZnS(100) substrates. Journal of Crystal Growth, 117(1-4), 532-535. https://doi.org/10.1016/0022-0248(92)90808-V

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title = "Electron beam excitation and profiling of strained CdS epilayers grown by metalorganic vapour phase epitaxy on GaAs(111)A, GaAs(100), ZnSe(100) and ZnS(100) substrates",

abstract = "The variation in the penetration depth of an electron beam with energy is used to profile the strain in various CdS epilayers. The red shift of the excitonic luminescence with increasing beam energy is consistent with an increase of compressive strain with depth.",

author = "C. Trager-Cowan and Parbrook, \{P. J.\} and F. Yang and X. Chen and B. Henderson and O'Donnell, \{K. P.\} and B. Cockayne and Wright, \{P. J.\}",

year = "1992",

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doi = "10.1016/0022-0248(92)90808-V",

language = "English",

volume = "117",

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journal = "Journal of Crystal Growth",

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Trager-Cowan, C, Parbrook, PJ, Yang, F, Chen, X, Henderson, B, O'Donnell, KP, Cockayne, B & Wright, PJ 1992, 'Electron beam excitation and profiling of strained CdS epilayers grown by metalorganic vapour phase epitaxy on GaAs(111)A, GaAs(100), ZnSe(100) and ZnS(100) substrates', Journal of Crystal Growth, vol. 117, no. 1-4, pp. 532-535. https://doi.org/10.1016/0022-0248(92)90808-V

TY - JOUR

T1 - Electron beam excitation and profiling of strained CdS epilayers grown by metalorganic vapour phase epitaxy on GaAs(111)A, GaAs(100), ZnSe(100) and ZnS(100) substrates

AU - Trager-Cowan, C.

AU - Parbrook, P. J.

AU - Yang, F.

AU - Chen, X.

AU - Henderson, B.

AU - O'Donnell, K. P.

AU - Cockayne, B.

AU - Wright, P. J.

PY - 1992/2/2

Y1 - 1992/2/2

N2 - The variation in the penetration depth of an electron beam with energy is used to profile the strain in various CdS epilayers. The red shift of the excitonic luminescence with increasing beam energy is consistent with an increase of compressive strain with depth.

AB - The variation in the penetration depth of an electron beam with energy is used to profile the strain in various CdS epilayers. The red shift of the excitonic luminescence with increasing beam energy is consistent with an increase of compressive strain with depth.

UR - https://www.scopus.com/pages/publications/0027108165

U2 - 10.1016/0022-0248(92)90808-V

DO - 10.1016/0022-0248(92)90808-V

M3 - Article

AN - SCOPUS:0027108165

SN - 0022-0248

VL - 117

SP - 532

EP - 535

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

Electron beam excitation and profiling of strained CdS epilayers grown by metalorganic vapour phase epitaxy on GaAs(111)A, GaAs(100), ZnSe(100) and ZnS(100) substrates

Abstract

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