Electron-beam-induced segregation in InGaN/GaN multiple-quantum wells

J. P. O'Neill; I. M. Ross; A. G. Cullis; T. Wang; P. J. Parbrook

doi:10.1063/1.1606105

Electron-beam-induced segregation in InGaN/GaN multiple-quantum wells

J. P. O'Neill
, I. M. Ross
, A. G. Cullis
, T. Wang
, P. J. Parbrook

University of Sheffield

Research output: Contribution to journal › Article › peer-review

Abstract

A study of the morphology and composition of In_xGa _1-xN/GaN multiple-quantum-well structures is presented. Microstructural analysis was done to study the dynamical effects of electron-beam irradiation on the relative indium distribution within the quantum wells. It was found that exposure to relatively low incident beam illumination, corresponding to current densities at the specimen of ∼ 100 pA/cm² induces significant nanoclustering of indium within the multiple-quantum wells.

Original language	English
Pages (from-to)	1965-1967
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	10
DOIs	https://doi.org/10.1063/1.1606105
Publication status	Published - 8 Sep 2003
Externally published	Yes

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10.1063/1.1606105

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abstract = "A study of the morphology and composition of InxGa 1-xN/GaN multiple-quantum-well structures is presented. Microstructural analysis was done to study the dynamical effects of electron-beam irradiation on the relative indium distribution within the quantum wells. It was found that exposure to relatively low incident beam illumination, corresponding to current densities at the specimen of ∼ 100 pA/cm2 induces significant nanoclustering of indium within the multiple-quantum wells.",

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AU - O'Neill, J. P.

AU - Ross, I. M.

AU - Cullis, A. G.

AU - Wang, T.

AU - Parbrook, P. J.

PY - 2003/9/8

Y1 - 2003/9/8

N2 - A study of the morphology and composition of InxGa 1-xN/GaN multiple-quantum-well structures is presented. Microstructural analysis was done to study the dynamical effects of electron-beam irradiation on the relative indium distribution within the quantum wells. It was found that exposure to relatively low incident beam illumination, corresponding to current densities at the specimen of ∼ 100 pA/cm2 induces significant nanoclustering of indium within the multiple-quantum wells.

AB - A study of the morphology and composition of InxGa 1-xN/GaN multiple-quantum-well structures is presented. Microstructural analysis was done to study the dynamical effects of electron-beam irradiation on the relative indium distribution within the quantum wells. It was found that exposure to relatively low incident beam illumination, corresponding to current densities at the specimen of ∼ 100 pA/cm2 induces significant nanoclustering of indium within the multiple-quantum wells.

UR - https://www.scopus.com/pages/publications/0141989787

U2 - 10.1063/1.1606105

DO - 10.1063/1.1606105

M3 - Article

AN - SCOPUS:0141989787

SN - 0003-6951

VL - 83

SP - 1965

EP - 1967

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Electron-beam-induced segregation in InGaN/GaN multiple-quantum wells

Abstract

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