Electron channeling contrast imaging of defects in III-nitride semiconductors

C. Trager-Cowan; G. Naresh-Kumar; N. Allehiani; S. Kraeusel; B. Hourahine; S. Vespucci; D. Thomson; J. Bruckbauer; G. Kusch; P. R. Edwards; R. W. Martin; C. Mauder; A. P. Day; A. Winkelmann; A. Vilalta-Clemente; A. J. Wilkinson; P. J. Parbrook; M. J. Kappers; M. A. Moram; R. A. Oliver; C. J. Humphreys; P. Shields; E. D. Le Boulbar; D. Maneuski; V. O'Shea; K. P. Mingard

doi:10.1017/S1431927614006849

Electron channeling contrast imaging of defects in III-nitride semiconductors

C. Trager-Cowan
, G. Naresh-Kumar
, N. Allehiani
, S. Kraeusel
, B. Hourahine
, S. Vespucci
, D. Thomson
, J. Bruckbauer
, G. Kusch
, P. R. Edwards
, R. W. Martin
, C. Mauder
, A. P. Day
, A. Winkelmann
, A. Vilalta-Clemente
, A. J. Wilkinson
, P. J. Parbrook
, M. J. Kappers
, M. A. Moram
, R. A. Oliver

C. J. Humphreys, P. Shields, E. D. Le Boulbar, D. Maneuski, V. O'Shea, K. P. Mingard

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1024-1025
Number of pages	2
Journal	Microscopy and Microanalysis
Volume	20
Issue number	3
DOIs	https://doi.org/10.1017/S1431927614006849
Publication status	Published - 1 Aug 2014
Event	Microscopy and Microanalysis 2014, M and M 2014 - Hartford, United States Duration: 3 Aug 2014 → 7 Aug 2014

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Trager-Cowan, C., Naresh-Kumar, G., Allehiani, N., Kraeusel, S., Hourahine, B., Vespucci, S., Thomson, D., Bruckbauer, J., Kusch, G., Edwards, P. R., Martin, R. W., Mauder, C., Day, A. P., Winkelmann, A., Vilalta-Clemente, A., Wilkinson, A. J., Parbrook, P. J., Kappers, M. J., Moram, M. A., ... Mingard, K. P. (2014). Electron channeling contrast imaging of defects in III-nitride semiconductors. Microscopy and Microanalysis, 20(3), 1024-1025. https://doi.org/10.1017/S1431927614006849

@article{c6127e07b0b04e4d8a049315e45a1d2c,

title = "Electron channeling contrast imaging of defects in III-nitride semiconductors",

author = "C. Trager-Cowan and G. Naresh-Kumar and N. Allehiani and S. Kraeusel and B. Hourahine and S. Vespucci and D. Thomson and J. Bruckbauer and G. Kusch and Edwards, \{P. R.\} and Martin, \{R. W.\} and C. Mauder and Day, \{A. P.\} and A. Winkelmann and A. Vilalta-Clemente and Wilkinson, \{A. J.\} and Parbrook, \{P. J.\} and Kappers, \{M. J.\} and Moram, \{M. A.\} and Oliver, \{R. A.\} and Humphreys, \{C. J.\} and P. Shields and \{Le Boulbar\}, \{E. D.\} and D. Maneuski and V. O'Shea and Mingard, \{K. P.\}",

year = "2014",

month = aug,

day = "1",

doi = "10.1017/S1431927614006849",

language = "English",

volume = "20",

pages = "1024--1025",

journal = "Microscopy and Microanalysis",

issn = "1431-9276",

publisher = "Oxford University Press",

number = "3",

note = "Microscopy and Microanalysis 2014, M and M 2014 ; Conference date: 03-08-2014 Through 07-08-2014",

}

Trager-Cowan, C, Naresh-Kumar, G, Allehiani, N, Kraeusel, S, Hourahine, B, Vespucci, S, Thomson, D, Bruckbauer, J, Kusch, G, Edwards, PR, Martin, RW, Mauder, C, Day, AP, Winkelmann, A, Vilalta-Clemente, A, Wilkinson, AJ, Parbrook, PJ, Kappers, MJ, Moram, MA, Oliver, RA, Humphreys, CJ, Shields, P, Le Boulbar, ED, Maneuski, D, O'Shea, V & Mingard, KP 2014, 'Electron channeling contrast imaging of defects in III-nitride semiconductors', Microscopy and Microanalysis, vol. 20, no. 3, pp. 1024-1025. https://doi.org/10.1017/S1431927614006849

TY - JOUR

T1 - Electron channeling contrast imaging of defects in III-nitride semiconductors

AU - Trager-Cowan, C.

AU - Naresh-Kumar, G.

AU - Allehiani, N.

AU - Kraeusel, S.

AU - Hourahine, B.

AU - Vespucci, S.

AU - Thomson, D.

AU - Bruckbauer, J.

AU - Kusch, G.

AU - Edwards, P. R.

AU - Martin, R. W.

AU - Mauder, C.

AU - Day, A. P.

AU - Winkelmann, A.

AU - Vilalta-Clemente, A.

AU - Wilkinson, A. J.

AU - Parbrook, P. J.

AU - Kappers, M. J.

AU - Moram, M. A.

AU - Oliver, R. A.

AU - Humphreys, C. J.

AU - Shields, P.

AU - Le Boulbar, E. D.

AU - Maneuski, D.

AU - O'Shea, V.

AU - Mingard, K. P.

PY - 2014/8/1

Y1 - 2014/8/1

UR - https://www.scopus.com/pages/publications/84927935462

U2 - 10.1017/S1431927614006849

DO - 10.1017/S1431927614006849

M3 - Article

AN - SCOPUS:84927935462

SN - 1431-9276

VL - 20

SP - 1024

EP - 1025

JO - Microscopy and Microanalysis

JF - Microscopy and Microanalysis

IS - 3

T2 - Microscopy and Microanalysis 2014, M and M 2014

Y2 - 3 August 2014 through 7 August 2014

ER -

Electron channeling contrast imaging of defects in III-nitride semiconductors

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