Electron drift velocity model for simulation of InGaAs JFETs

N. Cordero; K. McCarthy; C. Lyden; W. M. Kelly

doi:10.1049/ip-g-2.1993.0044

Electron drift velocity model for simulation of InGaAs JFETs

N. Cordero
, K. McCarthy
, C. Lyden
, W. M. Kelly

School of Engineering and Architecture

University College Cork

Research output: Contribution to journal › Article › peer-review

Abstract

Simulations of InGaAs JFETs were carried out using a two-dimensional numerical simulator. The results show that the electron drift velocity field characteristic is very important in modelling the Id/ Vds behaviour of these devices. From comparison with experimental results, we conclude that it is appropriate to use a velocity field dependence function for InGaAs, similar to the drift velocity function used for Si JFETs.

Original language	English
Pages (from-to)	261-263
Number of pages	3
Journal	IEE Proceedings, Part G: Circuits, Devices and Systems
Volume	140
Issue number	4
DOIs	https://doi.org/10.1049/ip-g-2.1993.0044
Publication status	Published - 1993

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10.1049/ip-g-2.1993.0044

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@article{093d1bbdf95e4fb29ef93a9b8eb058b5,

title = "Electron drift velocity model for simulation of InGaAs JFETs",

abstract = "Simulations of InGaAs JFETs were carried out using a two-dimensional numerical simulator. The results show that the electron drift velocity field characteristic is very important in modelling the Id/ Vds behaviour of these devices. From comparison with experimental results, we conclude that it is appropriate to use a velocity field dependence function for InGaAs, similar to the drift velocity function used for Si JFETs.",

author = "N. Cordero and K. McCarthy and C. Lyden and Kelly, \{W. M.\}",

year = "1993",

doi = "10.1049/ip-g-2.1993.0044",

language = "English",

volume = "140",

pages = "261--263",

journal = "IEE Proceedings, Part G: Circuits, Devices and Systems",

issn = "0956-3768",

publisher = "John Wiley and Sons Ltd",

number = "4",

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TY - JOUR

T1 - Electron drift velocity model for simulation of InGaAs JFETs

AU - Cordero, N.

AU - McCarthy, K.

AU - Lyden, C.

AU - Kelly, W. M.

PY - 1993

Y1 - 1993

N2 - Simulations of InGaAs JFETs were carried out using a two-dimensional numerical simulator. The results show that the electron drift velocity field characteristic is very important in modelling the Id/ Vds behaviour of these devices. From comparison with experimental results, we conclude that it is appropriate to use a velocity field dependence function for InGaAs, similar to the drift velocity function used for Si JFETs.

AB - Simulations of InGaAs JFETs were carried out using a two-dimensional numerical simulator. The results show that the electron drift velocity field characteristic is very important in modelling the Id/ Vds behaviour of these devices. From comparison with experimental results, we conclude that it is appropriate to use a velocity field dependence function for InGaAs, similar to the drift velocity function used for Si JFETs.

UR - https://www.scopus.com/pages/publications/0027648454

U2 - 10.1049/ip-g-2.1993.0044

DO - 10.1049/ip-g-2.1993.0044

M3 - Article

AN - SCOPUS:0027648454

SN - 0956-3768

VL - 140

SP - 261

EP - 263

JO - IEE Proceedings, Part G: Circuits, Devices and Systems

JF - IEE Proceedings, Part G: Circuits, Devices and Systems

IS - 4

ER -

Electron drift velocity model for simulation of InGaAs JFETs

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