Electron spin resonance in Ge nanowires doped with Mn

R. B. Morgunov; A. I. Dmitriev; Y. Tanimoto; J. S. Kulkarni; J. D. Holmes; O. L. Kazakova

doi:10.1016/j.jmmm.2006.10.810

Electron spin resonance in Ge nanowires doped with Mn

R. B. Morgunov
, A. I. Dmitriev
, Y. Tanimoto
, J. S. Kulkarni
, J. D. Holmes
, O. L. Kazakova

Research output: Contribution to journal › Article › peer-review

Abstract

Electron spin resonance (ESR) is measured in arrays of Ge nanowires (NWs) doped with Mn, x=1% and 3%. Contributions due to localized magnetic ions and charge carriers to the magnetic properties of NWs are observed. Doping with Mn causes a ferromagnetic ordering at temperatures up to 285 K. Zero-field ferromagnetic resonance (FMR) is observed in Ge_0.97Mn_0.03 NWs at room temperature. We demonstrate the influence of the Mn concentration on the angular dependence and linewidth of the FMR spectra. We found a remarkable correlation between parameters of the FMR on Mn ions and the paramagnetic resonance on spin-polarized carriers.

Original language	English
Pages (from-to)	e824-e826
Journal	Journal of Magnetism and Magnetic Materials
Volume	310
Issue number	2 SUPPL. PART 3
DOIs	https://doi.org/10.1016/j.jmmm.2006.10.810
Publication status	Published - Mar 2007
Externally published	Yes

Keywords

DMS
FMR
GeMn
Nanowires

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10.1016/j.jmmm.2006.10.810

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title = "Electron spin resonance in Ge nanowires doped with Mn",

abstract = "Electron spin resonance (ESR) is measured in arrays of Ge nanowires (NWs) doped with Mn, x=1\% and 3\%. Contributions due to localized magnetic ions and charge carriers to the magnetic properties of NWs are observed. Doping with Mn causes a ferromagnetic ordering at temperatures up to 285 K. Zero-field ferromagnetic resonance (FMR) is observed in Ge0.97Mn0.03 NWs at room temperature. We demonstrate the influence of the Mn concentration on the angular dependence and linewidth of the FMR spectra. We found a remarkable correlation between parameters of the FMR on Mn ions and the paramagnetic resonance on spin-polarized carriers.",

keywords = "DMS, FMR, GeMn, Nanowires",

author = "Morgunov, \{R. B.\} and Dmitriev, \{A. I.\} and Y. Tanimoto and Kulkarni, \{J. S.\} and Holmes, \{J. D.\} and Kazakova, \{O. L.\}",

year = "2007",

month = mar,

doi = "10.1016/j.jmmm.2006.10.810",

language = "English",

volume = "310",

pages = "e824--e826",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier B.V.",

number = "2 SUPPL. PART 3",

}

TY - JOUR

T1 - Electron spin resonance in Ge nanowires doped with Mn

AU - Morgunov, R. B.

AU - Dmitriev, A. I.

AU - Tanimoto, Y.

AU - Kulkarni, J. S.

AU - Holmes, J. D.

AU - Kazakova, O. L.

PY - 2007/3

Y1 - 2007/3

N2 - Electron spin resonance (ESR) is measured in arrays of Ge nanowires (NWs) doped with Mn, x=1% and 3%. Contributions due to localized magnetic ions and charge carriers to the magnetic properties of NWs are observed. Doping with Mn causes a ferromagnetic ordering at temperatures up to 285 K. Zero-field ferromagnetic resonance (FMR) is observed in Ge0.97Mn0.03 NWs at room temperature. We demonstrate the influence of the Mn concentration on the angular dependence and linewidth of the FMR spectra. We found a remarkable correlation between parameters of the FMR on Mn ions and the paramagnetic resonance on spin-polarized carriers.

AB - Electron spin resonance (ESR) is measured in arrays of Ge nanowires (NWs) doped with Mn, x=1% and 3%. Contributions due to localized magnetic ions and charge carriers to the magnetic properties of NWs are observed. Doping with Mn causes a ferromagnetic ordering at temperatures up to 285 K. Zero-field ferromagnetic resonance (FMR) is observed in Ge0.97Mn0.03 NWs at room temperature. We demonstrate the influence of the Mn concentration on the angular dependence and linewidth of the FMR spectra. We found a remarkable correlation between parameters of the FMR on Mn ions and the paramagnetic resonance on spin-polarized carriers.

KW - DMS

KW - FMR

KW - GeMn

KW - Nanowires

UR - https://www.scopus.com/pages/publications/33847656104

U2 - 10.1016/j.jmmm.2006.10.810

DO - 10.1016/j.jmmm.2006.10.810

M3 - Article

AN - SCOPUS:33847656104

SN - 0304-8853

VL - 310

SP - e824-e826

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 2 SUPPL. PART 3

ER -

Electron spin resonance in Ge nanowires doped with Mn

Abstract

Keywords

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