Electron Trapping in SiO2 Formed by Oxygen Implantation

P. K. Hurley; S. Hall; W. Eccleston

doi:10.1109/55.145039

Electron Trapping in SiO2 Formed by Oxygen Implantation

P. K. Hurley
, S. Hall
, W. Eccleston

University of Liverpool

Research output: Contribution to journal › Article › peer-review

Abstract

Electron trapping in implanted oxides has been investigated using avalanche electron injection on a silicon/oxide/silicon capacitor structure. Analysis of the capacitance/voltage curves yields capture cross sections of 8 x 10-15 and 1 x 10-16 cm2. Moreover, we show that as the structure is sensitive to surface potential changes at both oxide/silicon interfaces, the technique permits the density and the centroid of the trapped charge to be determined independently.

Original language	English
Pages (from-to)	238-240
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	13
Issue number	5
DOIs	https://doi.org/10.1109/55.145039
Publication status	Published - May 1992
Externally published	Yes

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title = "Electron Trapping in SiO2 Formed by Oxygen Implantation",

abstract = "Electron trapping in implanted oxides has been investigated using avalanche electron injection on a silicon/oxide/silicon capacitor structure. Analysis of the capacitance/voltage curves yields capture cross sections of 8 x 10-15 and 1 x 10-16 cm2. Moreover, we show that as the structure is sensitive to surface potential changes at both oxide/silicon interfaces, the technique permits the density and the centroid of the trapped charge to be determined independently.",

author = "Hurley, \{P. K.\} and S. Hall and W. Eccleston",

year = "1992",

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AU - Hall, S.

AU - Eccleston, W.

PY - 1992/5

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N2 - Electron trapping in implanted oxides has been investigated using avalanche electron injection on a silicon/oxide/silicon capacitor structure. Analysis of the capacitance/voltage curves yields capture cross sections of 8 x 10-15 and 1 x 10-16 cm2. Moreover, we show that as the structure is sensitive to surface potential changes at both oxide/silicon interfaces, the technique permits the density and the centroid of the trapped charge to be determined independently.

AB - Electron trapping in implanted oxides has been investigated using avalanche electron injection on a silicon/oxide/silicon capacitor structure. Analysis of the capacitance/voltage curves yields capture cross sections of 8 x 10-15 and 1 x 10-16 cm2. Moreover, we show that as the structure is sensitive to surface potential changes at both oxide/silicon interfaces, the technique permits the density and the centroid of the trapped charge to be determined independently.

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U2 - 10.1109/55.145039

DO - 10.1109/55.145039

M3 - Article

AN - SCOPUS:0026866555

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VL - 13

SP - 238

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 5

ER -

Electron Trapping in SiO2 Formed by Oxygen Implantation

Abstract

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