@inproceedings{5a3219124b294ff7ae58abc830bdd7c7,
title = "Electron traps at sidewalls of vertical n+-GaAs/n--InGaP/p+-GaAs diodes detected with deep-level transient spectroscopy",
abstract = "Electron traps are detected from vertical n+-GaAs/n--InGaP/p+-GaAs diodes with deep-level transient spectroscopy (DLTS). Combining lock-in window (tw) varying DLTS and double-correlation DLTS (DDTLS), we assign the electron traps to surface states at the sidewalls of the diodes. The methodology is introduced in the paper.",
author = "Hao Yu and Hsu, \{Po Chun Brent\} and Abhitosh Vais and Eddy Simoen and Niamh Waldron and Nadine Collaert",
note = "Publisher Copyright: {\textcopyright} 2019 JSAP.; 19th International Workshop on Junction Technology, IWJT 2019 ; Conference date: 06-06-2019 Through 07-06-2019",
year = "2019",
month = jun,
doi = "10.23919/IWJT.2019.8802885",
language = "English",
series = "19th International Workshop on Junction Technology, IWJT 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "19th International Workshop on Junction Technology, IWJT 2019",
address = "United States",
}