Electronic and optical properties of self-assembled InN/GaN quantum dots

  • S. Schumacher
  • , N. Baer
  • , S. Schulz
  • , P. Gartner
  • , G. Czycholl
  • , F. Jahnke

Research output: Chapter in Book/Report/Conference proceedingsConference proceedingpeer-review

Abstract

Electronic and optical properties of self-assembled InN/GaN quantum dots are investigated using a tight-binding model combined with full-configuration interaction calculations. Multi-exciton spectra are discussed. Dark exciton and biexciton ground-states are found for small quantum dots.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006
DOIs
Publication statusPublished - 2006
Externally publishedYes
EventConference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006 - Long Beach, CA, United States
Duration: 21 May 200626 May 2006

Publication series

NameConference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006

Conference

ConferenceConference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006
Country/TerritoryUnited States
CityLong Beach, CA
Period21/05/0626/05/06

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