Electronic properties of polar and semi-polar dot-in-a-well heterostructures

Stefan Schulz; Oliver Marquardt

doi:10.1109/NUSOD.2015.7292802

Electronic properties of polar and semi-polar dot-in-a-well heterostructures

Stefan Schulz
, Oliver Marquardt

Paul Drude Institute for Solid State Electronics

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

We use a symmetry-adapted formalism to compute the elastic, piezoelectric, and electronic properties of polar and semi-polar dot-in-a-well (DWELL) systems. Our simulations reveal a reduced spatial separation of electron and hole ground state wave functions in semi-polar DWELL systems compared to their polar counterparts. This originates in part from the strongly reduced built-in potentials and in part from changes in the built-in potential profile. Our findings thus indicate superior recombination rates of semi-polar DWELLs, making these systems highly promising for future optoelectronic devices.

Original language	English
Title of host publication	15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015
Editors	Yuh-Renn Wu, Joachim Piprek
Publisher	IEEE Computer Society
Pages	21-22
Number of pages	2
ISBN (Electronic)	9781479983797
DOIs	https://doi.org/10.1109/NUSOD.2015.7292802
Publication status	Published - 10 May 2015
Event	15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015 - Taipei, Taiwan, Province of China Duration: 7 Sep 2015 → 11 Sep 2015

Publication series

Name	Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
Volume	2015-May
ISSN (Print)	2158-3234

Conference

Conference	15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015
Country/Territory	Taiwan, Province of China
City	Taipei
Period	7/09/15 → 11/09/15

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Charge carrier processes
Electric potential
Gallium nitride
Oscillators
Stationary state
Substrates
Wave functions

Access to Document

10.1109/NUSOD.2015.7292802

Cite this

Schulz, S., & Marquardt, O. (2015). Electronic properties of polar and semi-polar dot-in-a-well heterostructures. In Y.-R. Wu, & J. Piprek (Eds.), 15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015 (pp. 21-22). Article 7292802 (Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD; Vol. 2015-May). IEEE Computer Society. https://doi.org/10.1109/NUSOD.2015.7292802

Schulz, Stefan ; Marquardt, Oliver. / Electronic properties of polar and semi-polar dot-in-a-well heterostructures. 15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015. editor / Yuh-Renn Wu ; Joachim Piprek. IEEE Computer Society, 2015. pp. 21-22 (Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD).

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title = "Electronic properties of polar and semi-polar dot-in-a-well heterostructures",

abstract = "We use a symmetry-adapted formalism to compute the elastic, piezoelectric, and electronic properties of polar and semi-polar dot-in-a-well (DWELL) systems. Our simulations reveal a reduced spatial separation of electron and hole ground state wave functions in semi-polar DWELL systems compared to their polar counterparts. This originates in part from the strongly reduced built-in potentials and in part from changes in the built-in potential profile. Our findings thus indicate superior recombination rates of semi-polar DWELLs, making these systems highly promising for future optoelectronic devices.",

keywords = "Charge carrier processes, Electric potential, Gallium nitride, Oscillators, Stationary state, Substrates, Wave functions",

author = "Stefan Schulz and Oliver Marquardt",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015 ; Conference date: 07-09-2015 Through 11-09-2015",

year = "2015",

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language = "English",

series = "Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD",

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Schulz, S & Marquardt, O 2015, Electronic properties of polar and semi-polar dot-in-a-well heterostructures. in Y-R Wu & J Piprek (eds), 15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015., 7292802, Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD, vol. 2015-May, IEEE Computer Society, pp. 21-22, 15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015, Taipei, Taiwan, Province of China, 7/09/15. https://doi.org/10.1109/NUSOD.2015.7292802

Electronic properties of polar and semi-polar dot-in-a-well heterostructures. / Schulz, Stefan; Marquardt, Oliver.
15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015. ed. / Yuh-Renn Wu; Joachim Piprek. IEEE Computer Society, 2015. p. 21-22 7292802 (Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD; Vol. 2015-May).

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

TY - GEN

T1 - Electronic properties of polar and semi-polar dot-in-a-well heterostructures

AU - Schulz, Stefan

AU - Marquardt, Oliver

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N2 - We use a symmetry-adapted formalism to compute the elastic, piezoelectric, and electronic properties of polar and semi-polar dot-in-a-well (DWELL) systems. Our simulations reveal a reduced spatial separation of electron and hole ground state wave functions in semi-polar DWELL systems compared to their polar counterparts. This originates in part from the strongly reduced built-in potentials and in part from changes in the built-in potential profile. Our findings thus indicate superior recombination rates of semi-polar DWELLs, making these systems highly promising for future optoelectronic devices.

AB - We use a symmetry-adapted formalism to compute the elastic, piezoelectric, and electronic properties of polar and semi-polar dot-in-a-well (DWELL) systems. Our simulations reveal a reduced spatial separation of electron and hole ground state wave functions in semi-polar DWELL systems compared to their polar counterparts. This originates in part from the strongly reduced built-in potentials and in part from changes in the built-in potential profile. Our findings thus indicate superior recombination rates of semi-polar DWELLs, making these systems highly promising for future optoelectronic devices.

KW - Charge carrier processes

KW - Electric potential

KW - Gallium nitride

KW - Oscillators

KW - Stationary state

KW - Substrates

KW - Wave functions

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BT - 15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015

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PB - IEEE Computer Society

T2 - 15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015

Y2 - 7 September 2015 through 11 September 2015

ER -

Schulz S, Marquardt O. Electronic properties of polar and semi-polar dot-in-a-well heterostructures. In Wu YR, Piprek J, editors, 15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015. IEEE Computer Society. 2015. p. 21-22. 7292802. (Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD). doi: 10.1109/NUSOD.2015.7292802

Electronic properties of polar and semi-polar dot-in-a-well heterostructures

Abstract

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Keywords

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