Electronic Raman scattering from intersubband transitions in GaN/AlGaN quantum wells

M. P. Halsall; B. Sherliker; P. Harrison; V. D. Jovanović; D. Indjin; Z. Ikonić; T. Wang; M. A. Whitehead; P. J. Parbrook

doi:10.1002/pssc.200303385

Electronic Raman scattering from intersubband transitions in GaN/AlGaN quantum wells

M. P. Halsall
, B. Sherliker
, P. Harrison
, V. D. Jovanović
, D. Indjin
, Z. Ikonić
, T. Wang
, M. A. Whitehead
, P. J. Parbrook

Research output: Contribution to journal › Article › peer-review

Abstract

We present a Raman scattering study of two GaN/Al_xGa _1-xN multiple quantum well (MQW) structures with x = 0.3 and x = 0.4 and well widths of 6 nm and 4 nm respectively, they were nominally undoped but are expected to contain a low-density, n-type, carrier population due to the residual donors in the barriers. Polarization dependent Raman scattering was performed at room temperature, strong scattering due to in-tersubband transitions (ISBT's) in the GaN quantum wells was observed from both the e ₁-e₂ and e₁-e₃ transitions for both samples. The first sample has an e₁-e₂ transition at 300 meV and e₁-e₃ at 480 meV whilst the second sample has an e₁-e₂ transition at 360 meV and e₁-e ₃ at 580 meV. The full width half maximum of the Raman peaks is lower than that reported in infra-red absorption for similar, heavily doped, MQW structures.

Original language	English
Pages (from-to)	2662-2665
Number of pages	4
Journal	Physica Status Solidi C: Conferences
Issue number	7
DOIs	https://doi.org/10.1002/pssc.200303385
Publication status	Published - 2003
Externally published	Yes
Event	5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan Duration: 25 May 2003 → 30 May 2003

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@article{3f078cc12cfb43afb65a0a191360e882,

title = "Electronic Raman scattering from intersubband transitions in GaN/AlGaN quantum wells",

abstract = "We present a Raman scattering study of two GaN/AlxGa 1-xN multiple quantum well (MQW) structures with x = 0.3 and x = 0.4 and well widths of 6 nm and 4 nm respectively, they were nominally undoped but are expected to contain a low-density, n-type, carrier population due to the residual donors in the barriers. Polarization dependent Raman scattering was performed at room temperature, strong scattering due to in-tersubband transitions (ISBT's) in the GaN quantum wells was observed from both the e 1-e2 and e1-e3 transitions for both samples. The first sample has an e1-e2 transition at 300 meV and e1-e3 at 480 meV whilst the second sample has an e1-e2 transition at 360 meV and e1-e 3 at 580 meV. The full width half maximum of the Raman peaks is lower than that reported in infra-red absorption for similar, heavily doped, MQW structures.",

author = "Halsall, \{M. P.\} and B. Sherliker and P. Harrison and Jovanovi{\'c}, \{V. D.\} and D. Indjin and Z. Ikoni{\'c} and T. Wang and Whitehead, \{M. A.\} and Parbrook, \{P. J.\}",

year = "2003",

doi = "10.1002/pssc.200303385",

language = "English",

pages = "2662--2665",

journal = "Physica Status Solidi C: Conferences",

issn = "1610-1634",

publisher = "Wiley-VCH Verlag",

number = "7",

note = "5th International Conference on Nitride Semiconductors, ICNS 2003 ; Conference date: 25-05-2003 Through 30-05-2003",

}

TY - JOUR

T1 - Electronic Raman scattering from intersubband transitions in GaN/AlGaN quantum wells

AU - Halsall, M. P.

AU - Sherliker, B.

AU - Harrison, P.

AU - Jovanović, V. D.

AU - Indjin, D.

AU - Ikonić, Z.

AU - Wang, T.

AU - Whitehead, M. A.

AU - Parbrook, P. J.

PY - 2003

Y1 - 2003

N2 - We present a Raman scattering study of two GaN/AlxGa 1-xN multiple quantum well (MQW) structures with x = 0.3 and x = 0.4 and well widths of 6 nm and 4 nm respectively, they were nominally undoped but are expected to contain a low-density, n-type, carrier population due to the residual donors in the barriers. Polarization dependent Raman scattering was performed at room temperature, strong scattering due to in-tersubband transitions (ISBT's) in the GaN quantum wells was observed from both the e 1-e2 and e1-e3 transitions for both samples. The first sample has an e1-e2 transition at 300 meV and e1-e3 at 480 meV whilst the second sample has an e1-e2 transition at 360 meV and e1-e 3 at 580 meV. The full width half maximum of the Raman peaks is lower than that reported in infra-red absorption for similar, heavily doped, MQW structures.

AB - We present a Raman scattering study of two GaN/AlxGa 1-xN multiple quantum well (MQW) structures with x = 0.3 and x = 0.4 and well widths of 6 nm and 4 nm respectively, they were nominally undoped but are expected to contain a low-density, n-type, carrier population due to the residual donors in the barriers. Polarization dependent Raman scattering was performed at room temperature, strong scattering due to in-tersubband transitions (ISBT's) in the GaN quantum wells was observed from both the e 1-e2 and e1-e3 transitions for both samples. The first sample has an e1-e2 transition at 300 meV and e1-e3 at 480 meV whilst the second sample has an e1-e2 transition at 360 meV and e1-e 3 at 580 meV. The full width half maximum of the Raman peaks is lower than that reported in infra-red absorption for similar, heavily doped, MQW structures.

UR - https://www.scopus.com/pages/publications/84875088930

U2 - 10.1002/pssc.200303385

DO - 10.1002/pssc.200303385

M3 - Article

AN - SCOPUS:84875088930

SN - 1610-1634

SP - 2662

EP - 2665

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 7

T2 - 5th International Conference on Nitride Semiconductors, ICNS 2003

Y2 - 25 May 2003 through 30 May 2003

ER -

Electronic Raman scattering from intersubband transitions in GaN/AlGaN quantum wells

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