'Electronic structure of InyGa1-xNx/GaAs multiple quantum wells in the dilute-N regime from pressure and k·p studies'

Eoin O'Reilly; Choulis, SA; T. J.C. Hosea; S. Tomić; M. Kamal-Saadi; Adrian Adams; Ben G. Weinstein; P. J. Klar

'Electronic structure of InyGa1-xNx/GaAs multiple quantum wells in the dilute-N regime from pressure and k·p studies'

Eoin O'Reilly
, Choulis, SA
, T. J.C. Hosea
, S. Tomić
, M. Kamal-Saadi
, Adrian Adams
, Ben G. Weinstein
, P. J. Klar

School of Physics

Research output: Contribution to journal › Article › peer-review

Original language	English (Ireland)
Journal	Physical Review B
Publication status	Published - 2002

Cite this

@article{21d0b769ac894c9887a965e6515618ea,

title = "'Electronic structure of InyGa1-xNx/GaAs multiple quantum wells in the dilute-N regime from pressure and k·p studies'",

author = "Eoin O'Reilly and \{Choulis, SA\} and Hosea, \{T. J.C.\} and S. Tomi{\'c} and M. Kamal-Saadi and Adrian Adams and Weinstein, \{Ben G.\} and Klar, \{P. J.\}",

year = "2002",

language = "English (Ireland)",

journal = "Physical Review B",

issn = "2469-9950",

publisher = "American Physical Society",

}

TY - JOUR

T1 - 'Electronic structure of InyGa1-xNx/GaAs multiple quantum wells in the dilute-N regime from pressure and k·p studies'

AU - O'Reilly, Eoin

AU - Choulis, SA,

AU - Hosea, T. J.C.

AU - Tomić, S.

AU - Kamal-Saadi, M.

AU - Adams, Adrian

AU - Weinstein, Ben G.

AU - Klar, P. J.

PY - 2002

Y1 - 2002

M3 - Article

SN - 2469-9950

JO - Physical Review B

JF - Physical Review B

ER -