Electronic structure of lonsdaleite SixGe1-x alloys

Christopher A. Broderick

doi:10.1109/NUSOD49422.2020.9217637

Electronic structure of lonsdaleite SixGe1-x alloys

Christopher A. Broderick

School of Physics

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

Conventional diamond-structured silicon (Si) and germanium (Ge) possess indirect fundamental band gaps, limiting their potential for applications in light-emitting devices. However, Si_xGe_1-x alloys grown in the lonsdaleite ("hexagonal diamond") phase have recently emerged as a promising directgap, Si-compatible material system, with experimental measurements demonstrating strong room temperature photoluminescence. When grown in the lonsdaleite phase, Ge possesses a narrow (0:3 eV) "pseudo-direct"fundamental band gap. Lonsdaleite Si is indirect-gap (0:8 eV), creating the possibility to achieve direct-gap lonsdaleite SixGe1-x alloys across a Gerich composition range. We present a first principles analysis of the electronic and optical properties of lonsdaleite SixGe1-x alloys, elucidate the electronic structure evolution and direct-to indirect-gap transition, and describe the impact of alloy band mixing effects on inter-band optical transition strengths.

Original language	English
Title of host publication	2020 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2020
Publisher	IEEE Computer Society
Pages	3-4
Number of pages	2
ISBN (Electronic)	9781728160863
DOIs	https://doi.org/10.1109/NUSOD49422.2020.9217637
Publication status	Published - Sep 2020
Event	2020 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2020 - Turin, Italy Duration: 14 Sep 2020 → 18 Sep 2020

Publication series

Name	Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
Volume	2020-September
ISSN (Print)	2158-3234

Conference

Conference	2020 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2020
Country/Territory	Italy
City	Turin
Period	14/09/20 → 18/09/20

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

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10.1109/NUSOD49422.2020.9217637

Cite this

Broderick, C. A. (2020). Electronic structure of lonsdaleite SixGe1-x alloys. In 2020 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2020 (pp. 3-4). Article 9217637 (Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD; Vol. 2020-September). IEEE Computer Society. https://doi.org/10.1109/NUSOD49422.2020.9217637

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title = "Electronic structure of lonsdaleite SixGe1-x alloys",

abstract = "Conventional diamond-structured silicon (Si) and germanium (Ge) possess indirect fundamental band gaps, limiting their potential for applications in light-emitting devices. However, SixGe1-x alloys grown in the lonsdaleite ({"}hexagonal diamond{"}) phase have recently emerged as a promising directgap, Si-compatible material system, with experimental measurements demonstrating strong room temperature photoluminescence. When grown in the lonsdaleite phase, Ge possesses a narrow (0:3 eV) {"}pseudo-direct{"}fundamental band gap. Lonsdaleite Si is indirect-gap (0:8 eV), creating the possibility to achieve direct-gap lonsdaleite SixGe1-x alloys across a Gerich composition range. We present a first principles analysis of the electronic and optical properties of lonsdaleite SixGe1-x alloys, elucidate the electronic structure evolution and direct-to indirect-gap transition, and describe the impact of alloy band mixing effects on inter-band optical transition strengths.",

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note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 2020 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2020 ; Conference date: 14-09-2020 Through 18-09-2020",

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series = "Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD",

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Broderick, CA 2020, Electronic structure of lonsdaleite SixGe1-x alloys. in 2020 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2020., 9217637, Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD, vol. 2020-September, IEEE Computer Society, pp. 3-4, 2020 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2020, Turin, Italy, 14/09/20. https://doi.org/10.1109/NUSOD49422.2020.9217637

Electronic structure of lonsdaleite SixGe1-x alloys. / Broderick, Christopher A.
2020 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2020. IEEE Computer Society, 2020. p. 3-4 9217637 (Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD; Vol. 2020-September).

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

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N2 - Conventional diamond-structured silicon (Si) and germanium (Ge) possess indirect fundamental band gaps, limiting their potential for applications in light-emitting devices. However, SixGe1-x alloys grown in the lonsdaleite ("hexagonal diamond") phase have recently emerged as a promising directgap, Si-compatible material system, with experimental measurements demonstrating strong room temperature photoluminescence. When grown in the lonsdaleite phase, Ge possesses a narrow (0:3 eV) "pseudo-direct"fundamental band gap. Lonsdaleite Si is indirect-gap (0:8 eV), creating the possibility to achieve direct-gap lonsdaleite SixGe1-x alloys across a Gerich composition range. We present a first principles analysis of the electronic and optical properties of lonsdaleite SixGe1-x alloys, elucidate the electronic structure evolution and direct-to indirect-gap transition, and describe the impact of alloy band mixing effects on inter-band optical transition strengths.

AB - Conventional diamond-structured silicon (Si) and germanium (Ge) possess indirect fundamental band gaps, limiting their potential for applications in light-emitting devices. However, SixGe1-x alloys grown in the lonsdaleite ("hexagonal diamond") phase have recently emerged as a promising directgap, Si-compatible material system, with experimental measurements demonstrating strong room temperature photoluminescence. When grown in the lonsdaleite phase, Ge possesses a narrow (0:3 eV) "pseudo-direct"fundamental band gap. Lonsdaleite Si is indirect-gap (0:8 eV), creating the possibility to achieve direct-gap lonsdaleite SixGe1-x alloys across a Gerich composition range. We present a first principles analysis of the electronic and optical properties of lonsdaleite SixGe1-x alloys, elucidate the electronic structure evolution and direct-to indirect-gap transition, and describe the impact of alloy band mixing effects on inter-band optical transition strengths.

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Electronic structure of lonsdaleite SixGe1-x alloys

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